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We have found by infrared absorption that shallow acceptors in Si can be passivated throughout the bulk of a semiconductor sample several mm thick by annealing in H2 at high temperature (≳900 °C) and quenching to room temperature. The total number of shallow centers passivated in such samples is comparable to the number in highly doped surface layers passivated in a hydrogen plasma at lower temperature (typically <400 °C). The importance of bulk passivation techniques is discussed.

Single axial-mode operation of the pulsed far-infrared p-Ge laser with an intracavity Fabry–Perot type frequency selector has been observed by means of Fourier-transform spectroscopy. A spectral resolution better than 1 GHz has been achieved on an ordinary continuous-scan spectrometer using the event-locked technique for pulsed emission sources. A laser active-cavity finesse of at least unity has been directly confirmed from the measured emission spectral width. Analysis of the envelope of the corresponding interferogram suggests that the finesse exceeds 10.

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