Sulfur-Hydrogen Donor Complexes in Silicon

Peale, R. E.; Muro, Kouichi; Sievers, A. J.

doi:10.4028/www.scientific.net/msf.65-66.151

Cited by 11 publications

(10 citation statements)

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“…These small ionization energies are consistent with the effective-mass donor series observed in S, H diffused samples [5], and might explain why they were undetected in DLTS studies [6].…”

Section: Calculationssupporting

confidence: 70%

“…Similar percentages were found on Se and H for NL60, but in NL61 the localization on both H atoms was an order of magnitude smaller [3,4]. Infrared absorption measurements on S and H doped Si samples also suggested the formation of shallow donor S-H defects, with binding energies lying between 82.4 and 135.45 meV [5]. DLTS measurements failed to show any electrical activity from chalcogen-hydrogen defects [6].…”

Section: Introductionsupporting

confidence: 56%

“…Chalcogen-hydrogen complexes (here denoted by X -H, where X is S, Se and Te), have also been studied by several experimental techniques, including electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) [3,4], Fourier-transform infra-red (FTIR) spectroscopy [5], deep-level transient spectroscopy (DLTS) [6], and time-dependent conversion electron Maessbauer spectroscopy (CEMS) [7].…”

Section: Introductionmentioning

confidence: 99%

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Shallow donor activity of S–H, Se–H, and Te–H complexes in silicon

Coutinho

Torres

Jones

et al. 2002

Physica Status Solidi (b)

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The interaction of a single hydrogen atom with a substitutional chalcogen impurity (S, Se, or Te) is investigated by ab-initio modeling. In Se-H and Te-H complexes, the proton sits at an anti-bonding site relative to a nearest neighbor silicon atom, but two competitive trigonal structures for S-H are found. All the singly hydrogenated complexes are predicted to behave as shallow donors with levels lying above those of the substitutional S, Se and Te double donors. A comparison of our results with experimental data suggests an assignment of the Si-NL60 EPR signal to Se-H.

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“…These small ionization energies are consistent with the effective-mass donor series observed in S, H diffused samples [5], and might explain why they were undetected in DLTS studies [6].…”

Section: Calculationssupporting

confidence: 70%

Section: Introductionsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Shallow donor activity of S–H, Se–H, and Te–H complexes in silicon

Coutinho

Torres

Jones

et al. 2002

Physica Status Solidi (b)

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“…Consistent with the S = 1/2 spin value we assign the spectra to the neutral charge state of such complexes. Such an identification is further supported by IR absorption measurements which reveal the presence of the characteristic 1s f-, 2p electronic transitions assigned earlier to the S-H donor [3]. The proposed substitutional position of sulfur follows from the studies on isolated sulfur.…”

Section: Sulfur-hydrogen Complexesmentioning

confidence: 49%

“…In line with the introductory remark such a process should lead to a simultaneous generation of new single donor center. More recently such a center was indeed detected in IR absorption by Peale et al [3].…”

Section: Sulfur-hydrogen Complexesmentioning

confidence: 80%

Paramagnetic State of Hydrogen-Passivated Double-Donor Centers in Silicon

et al. 1995

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hydrogenation of two double donor centers in silicoii -substitutional sulfur and thermal donor -is studied by electroii paramagnetic resonance and electron-nuclear double resonance. For both centers the existence of a new paramagnetic S = 1/2 state identified as the neutral charge state of the double donor passivated with a single hydrogen atom is concluded. The microscopic structure of such complexes is discussed.

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Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS

Gwóźdź

Kolkovsky

Weber

et al. 2019

Physica Status Solidi (a)

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Sulfur is diffused into Czochralski (CZ) and Float‐Zone (FZ) silicon wafers at 1200 °C for 30 h. After diffusion, the wafers are slowly cooled in air. Several defect levels are observed by deep level transient spectroscopy (DLTS) in n‐ and p‐type samples. All defects levels are related to sulfur defects, but none could be identified with the donor and double donor states of substitutional S or molecular S2. Additional annealing of the samples at 300 °C generates four DLTS levels in n‐type Si and no peaks in p‐type Si. The enhancement of the emission rate with the electrical field confirm their donor and double donor‐like behavior. The authors identify the four DLTS levels in the annealed n‐type Si samples with the different charge states of monoatomic S and molecular S2 (S0, S+, S20, and S2+) defects in Si. Hydrogenation of the annealed samples by wet chemical etching results in a reduction of the intensity of S0, S+, S20, and S2+ due to a passivation of these defects. The authors did not observe any electrically active SH‐complexes in the hydrogenated samples.

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Sulfur-Hydrogen Donor Complexes in Silicon

Cited by 11 publications

References 0 publications

Shallow donor activity of S–H, Se–H, and Te–H complexes in silicon

Shallow donor activity of S–H, Se–H, and Te–H complexes in silicon

Paramagnetic State of Hydrogen-Passivated Double-Donor Centers in Silicon

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS

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