New Advances on Heterogeneous Integration of III–V on Silicon

Duan, Guang‐Hua; Olivier, S.; Malhouitre, Stéphane; Accard, A.; Kaspar, Peter; Valicourt, G. de; Levaufre, Guillaume; Girard, Nils; Liepvre, A. Le; Shen, Alexandre; Make, D.; Lelarge, F.; Jany, Christophe; Ribaud, Karen; Mallécot, F.; Charbonnier, P.; Gariah, H.; Kopp, Christophe; Gentner, J.L.

doi:10.1109/jlt.2014.2376174

Cited by 38 publications

(9 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This structure enables us to achieve low-loss adiabatic mode conversion while compensating for the large Δ difference from the InP to the SiN waveguide according to the conventional principle [15]. Note that stacked Si-InP waveguide couplings with similar effective indexes have already been achieved by using a taper structure [16]- [18]. Because the DFB and DBR gratings are ethed InP covered with SiO 2 , the InP core is also covered with SiO 2 , This means the SiO 2 layer exists between the InP and SiN cores.…”

Section: B Inp-sin Spot-size Convertermentioning

confidence: 99%

Integration of Eight-Channel Directly Modulated Membrane-Laser Array and SiN AWG Multiplexer on Si

Nishi

Fuji

Diamantopoulos

et al. 2019

J. Lightwave Technol.

View full text Add to dashboard Cite

Eight-channel 56-Gbit/s direct four-level pulse-amplitude modulation is demonstrated using a 1.3-µm wavelengthdivision-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguidegrating multiplexer. Direct bonding, epitaxial regrowth, and lowtemperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eightchannel bit-error rate was 2.7 × 10 −3 , which is less than the 7%overhead hard-decision forward-error-correction limit.

show abstract

Section: B Inp-sin Spot-size Convertermentioning

confidence: 99%

Integration of Eight-Channel Directly Modulated Membrane-Laser Array and SiN AWG Multiplexer on Si

Nishi

Fuji

Diamantopoulos

et al. 2019

J. Lightwave Technol.

View full text Add to dashboard Cite

show abstract

“…To increase the tuning range, multiple ring resonators with slightly different free spectral range (FSR) could be integrated, exploiting the so-called Vernier effect. Several different configurations have been proposed in literature (e.g., a 35 nm tuning range was demonstrated in [29]). The exact placement of the ring resonators can influence the maximal attainable output power and care has to be taken in optimizing the overall design.…”

Section: Nm Tunable and Multi-wavelength Lasers Integrated On Simentioning

confidence: 99%

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Wafer bonding is regarded as one of the most promising technologies for three-dimensional (3D) heterogeneous integration [1,2,3,4]. Wafer-to-wafer alignment accuracy specifications are more demanding due to smaller features in the fabrication of nanoelectronics and nanosystems [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

Moiré-Based Alignment Using Centrosymmetric Grating Marks for High-Precision Wafer Bonding

et al. 2019

View full text Add to dashboard Cite

High-precision aligned wafer bonding is essential to heterogeneous integration, with the device dimension reduced continuously. To get the alignment more accurately and conveniently, we propose a moiré-based alignment method using centrosymmetric grating marks. This method enables both coarse and fine alignment steps without requiring additional conventional cross-and-box alignment marks. Combined with an aligned wafer bonding system, alignment accuracy better than 300 nm (3σ) was achieved after bonding. Furthermore, the working principle of the moiré-based alignment for the backside alignment system was proposed to overcome the difficulty in bonding of opaque wafers. We believe this higher alignment accuracy is feasible to satisfy more demanding requirements in wafer-level stacking technologies.

show abstract

New Advances on Heterogeneous Integration of III–V on Silicon

Cited by 38 publications

References 17 publications

Integration of Eight-Channel Directly Modulated Membrane-Laser Array and SiN AWG Multiplexer on Si

Integration of Eight-Channel Directly Modulated Membrane-Laser Array and SiN AWG Multiplexer on Si

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Moiré-Based Alignment Using Centrosymmetric Grating Marks for High-Precision Wafer Bonding

Contact Info

Product

Resources

About