New Analytical Model for Real-Time Junction Temperature Estimation of Multichip Power Module Used in a Motor Drive

Ouhab, Merouane; Khatir, Zoubir; Ibrahim, Ali; Ousten, Jean-Pierre; Mitova, Radoslava; Wang, Miaoxin

doi:10.1109/tpel.2017.2736534

Cited by 30 publications

(10 citation statements)

References 15 publications

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“…The study in [28] deals with a substrate for a ball grid array package, where a belt of densely populated vias and two continuous copper layers are placed; however, the model is complicated and no CFD or experimental verifications are provided. For electrical engineers, it is more desirable to have an analytical thermal model such that the temperatures of devices with different designs and cooling methods can be fast predicted [29], [30]. In [14] and [31], an analytical thermal resistance model is developed for PCB thermal pads; however, the heat transfer boundary and the convective heat transfer coefficient variation over the temperature difference are not included, causing potential errors between calculations and measurements.…”

Section: Kcumentioning

confidence: 99%

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Thermal Modeling and Design Optimization of PCB Vias and Pads

Shen

Wang

Blaabjerg

et al. 2020

IEEE Trans. Power Electron.

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Miniature power semiconductor devices mounted on printed circuit boards (PCBs) are normally cooled by means of PCB vias, copper pads, and/or heatsinks. Various reference PCB thermal designs have been provided by semiconductor manufacturers and researchers. However, the recommendations are not optimal, and there are some discrepancies among them, which may confuse electrical engineers. This paper aims to develop analytical thermal resistance models for PCB vias and pads, and further to obtain the optimal design for thermal resistance minimization. Firstly, the PCB via array is thermally modeled in terms of multiple design parameters. A systematic parametric analysis leads to an optimal trajectory for the via diameter at different PCB specifications. Then an axisymmetric thermal resistance model is developed for PCB thermal pads where the heat conduction, convection and radiation all exist; due to the interdependence between the conductive/radiative heat transfer coefficients and the board temperatures, an algorithm is proposed to fast obtain the board-ambient thermal resistance and to predict the semiconductor junction temperature. Finally, the proposed thermal models and design optimization algorithms are verified by computational fluid dynamics (CFD) simulations and experimental measurements. Index terms-thermal resistance model, thermal management, printed circuit board (PCB), PCB via, thermal pad. NOMENCLATURE Bi Biot number h Heat transfer coefficient (W/(m 2 •K)) hconv Convective heat transfer coefficient (W/(m 2 •K)) hradi Radiative heat transfer coefficient (W/(m 2 •K)) k Thermal conductivity of a material (W/(m•K)) k1 Lateral thermal conductivity of the copper zone (W/(m 2 •K)) k2 Lateral thermal conductivity of the FR4 zone (W/(m 2 •K))

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Section: Kcumentioning

confidence: 99%

“…The full expression of (35) can be obtained by substituting (10), (24), (26), (27) and (29) into (33). However, the final transcendental equations do not have analytical solutions.…”

Section: Algorithm For Copper Pad Sizingmentioning

confidence: 99%

Thermal Modeling and Design Optimization of PCB Vias and Pads

Shen

Wang

Blaabjerg

et al. 2020

IEEE Trans. Power Electron.

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“…Other studies for siliconbased insulated gate bipolar transistors (Si IGBTs) have validated their proposed thermal models by measured die temperatures. [19][20][21][22][23][24][25][26][27][28] In these reports, the temperature validation range is significantly limited, up to only 70 °C. It is much lower than the practical operation temperatures of the PMs intended to handle high power.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Nakamura¹,

Kuroda²,

Nakahara³

et al. 2022

Jpn. J. Appl. Phys.

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This paper presents an experimental evaluation of the thermal couple impedance model of power modules (PMs), in which Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Eﬀect-Transistor (MOSFET) dies are implemented. The model considers the thermal cross-coupling eﬀect, representing the temperature rise of a die due to power dissipations by the other dies in the same PM. We propose a characterization method to obtain the thermal couple impedance of the SiC MOSFET-based PMs for model accuracy. Simulation based on the proposed model accurately estimates the measured die temperature of three PMs with diﬀerent die placements. The maximum error between measured and simulated die temperatures is within 8.1 ◦C in a wide and practical operation range from 70 ◦C to 200 ◦C. The thermal couple impedance model is helpful to design die placements of high power PMs considering the thermal cross-coupling eﬀect.

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“…Eleffendi et al [9] estimated online junction temperature by Kalman filter with the auxiliary of collector voltage. Ouhab et al [10] established an analytical electro-thermal model, which can be used during in-service conditions to predict the junction temperature. Junction temperature is critical for the state-of-health estimation of IGBT, but it is general accepted that directly junction temperature is very hard and intrusive It is necessary to do online junction temperature in more effective ways.…”

Section: Introductionmentioning

confidence: 99%

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

Liu

Jiao²,

Das

et al. 2021

IEEE Access

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Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding health status in the transient process. This paper develops a novel approach for solder-layer condition monitoring of IGBTs. In the approach a time-series nonparametric model of a power module is constructed, the current power and ambient temperature data are used to deduce the health state junction and case temperature. Three groups of time-series insulated gate bipolar transistors (IGBTs) data are used to train and verify the time-series nonparametric model for online conditions, the results show that the developed method has high accuracy. Compared with traditional methods, the time series non-parametric model method not only saves characteristic experiments but also saves the process of mathematical model construction. Besides, the proposed method also has the advantages of strong generalization and low equipment requirements which is useful for actual working conditions. Thereafter, another nonparametric model is built, the predicted junction temperature is used to estimate the collector voltage in the health state, and the percentage deviation of the measured collector voltage from the estimated voltage is used to do the state-of-health estimation of the IGBT and its accuracy is verified by the experiment result.INDEX TERMS IGBT, time-series ANN, state-of-health, junction temperature, artificial intelligence

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New Analytical Model for Real-Time Junction Temperature Estimation of Multichip Power Module Used in a Motor Drive

Cited by 30 publications

References 15 publications

Thermal Modeling and Design Optimization of PCB Vias and Pads

Thermal Modeling and Design Optimization of PCB Vias and Pads

Evaluation of thermal couple impedance model of power modules for accurate die temperature estimation up to 200 °C

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

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