New applications advisable for gallium nitride

Abstract

Materials Today 5 (2002) 24-31. doi:10.1016/S1369-7021(02)00636-32016-03-04T18:49:26

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

“…There have been tremendous interests in developing GaN-based electronics for high power, high frequency applications [6][7][8][9][10]. Due to its unipolar nature, a Schottky diode does not exhibit the minority carrier storage effect, thus faster switching speed and less reverse recovery current can be achieved with Schottky diodes compared to p-n junction diodes.…”

Local structural, magnetic, and optical properties of Zn1−xFexO thin films

“…The first is the ferromagnetism induced by electrons or holes (RKKY or double exchange mechanism) in the films. This has been observed in III-V and II-VI semiconductors [2][3][4][5][6]18]. The second is the weak ferromagnetism from FeO.…”

“…DMS can be synthesized from wide-band gap semiconductors with the replacement of the host sites of the semiconductors with magnetic impurities [2]. A number of wide-band gap III-V and II-VI semiconductors with a transition metal impurity have been studied widely [2][3][4][5][6]. ZnO was also examined as a potential DMS material on account of its band gap and exciton biding energy of 3.3 eV and 60 meV at room temperature, respectively.…”

Investigating optical properties of Cr:GaN system for various Cr concentrations (A DFT + U study)

“…Gallium nitride (GaN) is among III-V semiconductors having high chemical stability, energy efficiency, low cost and have shown considerable attraction for scientists owing to its outstanding optoelectronic and electronic applications in various technological fields including ultraviolet optoelectronic transistors, piezoelectric sensors [1], high resolution micro display [2], solid state lighting [3], photonic crystals [4], optogenetics [5], high electron mobility transistors (HEMTs) [6], automotive lighting [7], biological sensors [8] and spin lasers [9]. Among zincblende (ZB) and Wurtzite (WZ) phases, ZB phase of GaN is mostly suggested for research because of remarkable electronic properties which are highly required for fabrication of nanodevices [10,11].…”