New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell

Diallo, H. Ly; Maiga, Amadou Seidou; Wereme, A.; Sissoko, G.

doi:10.1051/epjap:2008085

Cited by 77 publications

(84 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…ii) At the back side (z = H) ( Sb is the excess minority carrier recombination velocity on the back of the base [25]. Its expression is obtained from the derivative (Figure 2) …”

Section: D(t) Is the Electron Diffusion Coefficient In The Base Givenmentioning

confidence: 99%

See 1 more Smart Citation

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Sylla¹,

Ly²,

Sow³

et al. 2018

JMP

View full text Add to dashboard Cite

In this work, we study the method for determining the maximum of the minority carrier recombination velocity at the junction Sf max , corresponding to the maximum power delivered by the photovoltaic generator. For this, we study the temperature influence on the behavior of the front white biased solar cell in steady state. By solving the continuity equation of excess minority carrier in the base, we have established the expressions of the photocurrent density, the recombination velocity on the back side of the base Sb, and the photovoltage. The photocurrent density and the photovoltage are plotted as a function of Sf, called, minority carrier recombination velocity at the junction surface, for different temperature values. The illuminated I-V characteristic curves of the solar cell are then derived. To better characterize the solar cell, we study the electrical power delivered by the base of the solar cell to the external charge circuit as either junction surface recombination velocity or photovoltage dependent. From the output power versus junction surface recombination velocity Sf, we have deduced an eigenvalue equation depending on junction recombination velocity. This equation allows to obtain the maximum junction recombination velocity Sf max corresponding to the maximum power delivered by the photovoltaic generator, throughout simulink model. Finally, we deduce the conversion efficiency of the solar cell.

show abstract

“…ii) At the back side (z = H) ( Sb is the excess minority carrier recombination velocity on the back of the base [25]. Its expression is obtained from the derivative (Figure 2) …”

Section: D(t) Is the Electron Diffusion Coefficient In The Base Givenmentioning

confidence: 99%

“…The influence of Sf max on the temperature can be plotted from a theoretical model of Sf max given by the following expression (25): …”

Section: Maximum Power Point and Efficiencymentioning

confidence: 99%

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Sylla¹,

Ly²,

Sow³

et al. 2018

JMP

View full text Add to dashboard Cite

show abstract

“…Equation (4) uses the concept of junction recombination velocity Sf that describes how the minority carrier flow through the junction [5,7,9]. Sf can be written as [5,7,9]:…”

Section: Excess Minority Carrier Densitymentioning

confidence: 99%

Wavelength’s Effects on Recombination Velocities and on Diffusion Capacitance Efficiency

Dia¹,

Dieng²,

Mbodj³

et al. 2018

IJRET

View full text Add to dashboard Cite

show abstract

“…Sf is the minority carrier junction recombination velocity, expresses with two components which describe the solar cell operating point and the looses induced by shunt resistance [12,13].…”

Section: Theorymentioning

confidence: 99%

Series Resistance Both Temperature and Wavelength Dependent in Silicon Solar Cell under Steady State

Diatta¹,

Ly²,

Diouf³

et al. 2017

IJERMT

View full text Add to dashboard Cite

New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell

Cited by 77 publications

References 3 publications

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

Wavelength’s Effects on Recombination Velocities and on Diffusion Capacitance Efficiency

Series Resistance Both Temperature and Wavelength Dependent in Silicon Solar Cell under Steady State

Contact Info

Product

Resources

About