New aspects of K promoted nitridation of the InP(100) surface

Abstract

Articles you may be interested inImpact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO 2 Appl. Phys. Lett. 97, 132102 (2010); 10.1063/1.3464170 Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces Appl. Phys. Lett. 96, 012107 (2010); 10.1063/1.3269906 Interstitial nitrogen induced by low-energy ion beam nitridation of AIII-BV semiconductor surfaces J. Appl. Phys. 90, 6066 (2001); 10.1063/1.1415765 X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surfaceThe effect of molecular nitrogen exposure on the InP͑100͒ surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P 3 N 5 nitride complex. Flash annealing at 400°C greatly enhanced the formation of this kind of nitride complex. Above 500°C, the nitride complex dissolved completely.