New aspects of quantification in r.f. GDOES

Payling, Richard; Michler, Johann; Aeberhard, M.; Popov, Yuriy

doi:10.1002/sia.1576

Cited by 16 publications

(10 citation statements)

References 21 publications

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“…It is an atom‐dependent and instrument‐dependent parameter, which must be determined independently for each spectral emission line and instrument. The different approaches developed so far to obtain quantitative compositional depth profiling are based on the assumption that the emission yield in GDs is essentially a matrix‐independent quantity .…”

Section: Resultsmentioning

confidence: 99%

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Sánchez

Fernández

Menéndez³

et al. 2013

Progress in Photovoltaics

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The analytical potential of radiofrequency pulsed glow discharge optical emission spectrometry (rf-PGD-OES) is investigated for quantitative depth profiling analysis of thin-film solar cells (TFSC) based on hydrogenated amorphous silicon (a-Si:H). This method does not require sampling at ultra-high-vacuum conditions, and so it facilitates higher sample throughput than do reference techniques. In this paper, the determination of compositional depth profiles of a-Si:H TFSC was performed by resorting to a multi-matrix calibration procedure. For this purpose, certified reference materials, as well as laboratory standards based on individual layers of doped a-Si:H, were simultaneously employed to build the analytical calibration curves. Results show that rf-PGD-OES allows us to discriminate the different layers of photovoltaic devices: the front contact composed by ZnO:Al 2 O 3 (AZO), the a-Si:H layer (the B-doped, intrinsic a-Si:H and P-doped films), the AZO/ Al back contact and substrate. A good agreement with the nominal values for element concentrations (e.g. 0.4% of H, 1.5% of B and 3.7% of P) and layer thicknesses (in the range of 950 nm for the front contact and 13 nm for the P-doped a-Si:H layer) was obtained, demonstrating the ability of rf-PGD-OES for a direct, sensitive and high-depth-resolution analysis of photovoltaic devices. Moreover, diffusion processes between the coating layers, which could have an important influence on the final efficiency of TFSC, can be identified as well. Hence, the findings support the use of rf-PGD-OES as an analysis method in the development of photovoltaic thin films.

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Section: Resultsmentioning

confidence: 99%

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Sánchez

Fernández

Menéndez³

et al. 2013

Progress in Photovoltaics

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“…This does not imply that this information is totally lost. On the contrary, recent rf-GD-OES studies by Payling and co-workers have shown that accurate information can be obtained from the first 2 nm of metallic specimens [43].…”

Section: Profiling Of a Boron-implanted Silicon Wafermentioning

confidence: 97%

Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

et al. 2002

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While the array of analytical methods routinely applied for depth profile analysis was fairly static over the decades of the 1980s and 1990s, there appears to be an emerging technique that has a number of very positive and complementary attributes, and warrants serious consideration by the thin film community. Radio frequency glow discharge optical emission spectroscopy (rf-GD-OES) is a technique that provides depth-resolved elemental composition information on a wide variety of sample types. In a manner very much like most depth profiling methods, the rf-GD plasma utilizes an ion sputtering step to ablate sample material in a layer-by-layer fashion. Different from the more commonly applied methods, the device operates at elevated pressures [2-10 Torr Ar (266-1,330 Pa)] and has the inherent capability of sputtering electrically insulating materials directly, without any auxiliary means of charge compensation. In addition, sputtering rates on the order of 1 micro m/min provide rapid analysis, with depth resolving powers that are comparable to high-vacuum sputtering methods. Three examples of the use of the rf-GD-OES method are presented as examples of its analytical potential: (1) boron-implanted silicon wafer, (2) a barrier-type alumina film, and (3) a porous-type alumina film. It is believed that the method holds a great deal of promise as part of the arsenal of weapons in the thin films laboratory.

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“…Concentration profiles in the direction normal to the coating surface were measured by glow-discharge optical emission spectroscopy (GD-OES) using a JY 5000 RF instrument from Jobin-Yvon Horiba and equipped by a glow-discharge source of 4 mm diameter [14].…”

Section: Methodsmentioning

confidence: 99%

Origin of intragranular crystallographic misorientations in hot-dip Al–Zn–Si coatings

Niederberger¹,

Michler²,

Jacot³

2008

Acta Materialia

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The origin of intragranular variations of the crystallographic orientation in hot-dip Al-Zn-Si coatings is discussed based on new experimental results and modelling. The solidification microstructure in as-received 55Al-43.4Zn-1.6Si (in wt.%) coatings deposited on steel plates in an industrial production line was analyzed by electron backscattered diffraction, glow-discharge optical emission spectroscopy and atomic force microscopy (AFM). The results were compared with those obtained in coatings re-solidified under different cooling and mechanical loading conditions. Continuous variations of the crystallographic orientation as large as 35°were observed within individual grains of Al-Zn-Si, consistent with previous studies. However, the mechanisms previously proposed for the origin of intragranular crystallographic misorientations had to be revisited. The new experimental data acquired during this study indicate that the solidification shrinkage accumulating in the area of the grain envelope is the driving force for the formation of intragranular misorientations. The solidification shrinkage leads to the development of tensile stresses in the oxide film covering the coating while it solidifies. Estimations based on AFM profiles and phase field simulations of the dendritic structure indicate that the stresses applied on the dendrite network are sufficient to deform plastically the dendrite arms during solidification.

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New aspects of quantification in r.f. GDOES

Cited by 16 publications

References 21 publications

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

Origin of intragranular crystallographic misorientations in hot-dip Al–Zn–Si coatings

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