New Aspects of the Diluted Dynamic Clean Process

Tardif, François J.; Lardin, T.; Maciejny, A.; Danel, Adrien; Boelen, Pieter; Cowache, C.; Kashkoush, Ismail; Novak, R.

doi:10.4028/www.scientific.net/ssp.65-66.19

Cited by 17 publications

(18 citation statements)

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“…From Eq. 6, in the immediate vicinity of zero current potential, the values of the free potential, E r , and of the corrosion current density, i corr , can be derived [10] i corr ϭ RT/F(␣ ϩ ␤) R p [11] where the polarization resistance R p is given by R p ϭ (∂E/∂i) iϭ0 .…”

Section: Discussionmentioning

confidence: 99%

“…Present objectives in the field of wet treatment are aimed at reaching economic requirements for costs of chemicals and environmental regulations. 11 In this respect, our purpose is to undertake a fundamental study of the behavior, i.e., kinetics of electrochemical corrosion and their consequences on surface roughness of silicon substrates with reactants diluted in high purity deionized water. Equilibria in HF-containing solutions were thoroughly studied for determining the rate and the mechanism of silicon oxide dissolution.…”

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confidence: 99%

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Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Bertagna

Erre

Rouelle

et al. 1999

J. Electrochem. Soc.

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A research program was initiated in order to investigate the electrochemical corrosion of n-and p-type silicon substrates in 0.25 M dilute HF solutions, and the influence of fluoride ions or proton additives. All experiments were conducted in both the dark and under constant light flux, with solutions thoroughly degassed by high purity argon bubbling. Polarization resistance measurements near an open-circuit potential lead to the value of the corrosion current, while scanning the potential in the range of anodic and cathodic reactions permitted evaluation of the kinetics of charge transfer as a function of the majority carriers density in the semiconductor and the ionic composition of the solution. The influence of these parameters on the surface roughness of the silicon samples was also examined by ex situ atomic force microscopy profile measurements.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Bertagna

Erre

Rouelle

et al. 1999

J. Electrochem. Soc.

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“…A dynamic diluted clean based on HF was first performed to etch native or chemical oxide. For the hydrophobic approach, the surface of the wafers was then reoxidized by ozone-based chemistry as reported by Tardif et al 23 Therefore, a hydrophilic surface was obtained thanks to a thin chemical SiO 2 layer. For the hydrophobic approach, in order to minimize roughness and thus increase the attractive interactions via van der Waals forces, a surface reconstruction generated by H 2 annealing was performed on the deoxidized Si wafers.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Buckling Free Ultrathin Silicon Membranes by Direct Bonding with Thermal Difference

et al. 2015

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An innovative method to fabricate large area (up to several squared millimeters) ultrathin (100 nm) monocrystalline silicon (Si) membranes is described. This process is based on the direct bonding of a silicon-on-insulator wafer with a preperforated silicon wafer. The stress generated by the thermal difference applied during the bonding process is exploited to produce buckling free silicon nanomembranes of large areas. The thermal differences required to achieve these membranes (≥1 mm(2)) are estimated by analytical calculations. An experimental study of the stress achievable by direct bonding through two specific surface preparations (hydrophobic or hydrophilic) is reported. Buckling free silicon nanomembranes secured on a 2 × 2 cm(2) frame with lateral dimensions up to 5 × 5 mm(2) are successfully fabricated using the optimized direct bonding process. The stress estimated by theoretical analysis is confirmed by Raman measurements, while the flatness of the nanomembranes is demonstrated by optical interferometry. The successful fabrications of high resolution (50 nm half pitch) tungsten gratings on the silicon nanomembranes and of focused ion beam milling nanostructures show the promising potential of the Si membranes for X-ray optics and for the emerging nanosensor market.

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“…As the requirements for device performance and reliability have become stringent in gigascale integration ͑GSI͒ silicon devices, wafer cleaning technology to perform ultraclean wafer surface is critically important. [1][2][3][4][5][6] It goes without saying that metallic contaminants on silicon surface are fatal to semiconductor device. [7][8][9][10][11] After much research on metallic contamination, the removal efficiency for all metallic impurities was summarized by the two mechanisms as follows.…”

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confidence: 99%

Removal Efficiency of Metallic Impurities on Various Substrates in HF-Based Solutions

Choi

Ohmi

2001

J. Electrochem. Soc.

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In this study, the removal efficiency of metallic impurities with various substrate surfaces has been investigated. It strongly depends on the substrate conditions as well as the kind of metallic impurities. Copper ͑Cu͒ impurities deposited on an amorphous silicon ͑a-Si͒ surface are hardly removed by a hydrofluoric acid-hydrogen peroxide mixture ͑FPM͒ cleaning, while they are completely removed from a single crystalline silicon ͑c-Si͒ surface at a level lower than the detection limit. A hydrofluoric acid-hydrogen peroxide mixture with nonionic surfactant ͑FPMS͒ cleaning with high HF concentration, however, can efficiently remove Cu contaminants from both c-Si and a-Si surfaces. We postulate that both etching of the silicon by the FPM solution and surface passivation by the surfactant are essential to removing Cu contaminants from a-Si surface. Moreover, the Cu removal efficiency of FPMS solution is highly dependent on the nature of a-Si films. The range of high removal efficiency on a-Si film surface with inactivated phosphorus, when changing the chemical mixing ratio of an FPMS solution with 50 ppm nonionic surfactant, is much broader than that on undoped a-Si film surfaces, whereas it is not depending on the presence of hydrogen in a-Si film. In order to remove metallic impurities from all substrates including various a-Si film surfaces, a cleaning solution should have the etching capability of substrates and high dissolution rate of metallic contaminants. Much more attention should be given for HF-based solution process of various substrates with high etching rate.

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New Aspects of the Diluted Dynamic Clean Process

Cited by 17 publications

References 0 publications

Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Corrosion Rate of n‐ and p‐Silicon Substrates in HF, HF + HCl, and HF + NH 4 F Aqueous Solutions

Fabrication of Buckling Free Ultrathin Silicon Membranes by Direct Bonding with Thermal Difference

Removal Efficiency of Metallic Impurities on Various Substrates in HF-Based Solutions

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