New compound Mg3In4V6O24 and its physicochemical characteristic

Abstract

A new compound of the formula Mg 3 In 4 V 6 O 24 belonging to the family M 3 A 4 V 6 O 24 [where M = metal(II), A = metal(III)] was obtained by the solid-state reaction method. The compound was synthesized by heating in air a mixture of Mg 3 (VO 4 ) 2 and InVO 4 or MgV 2 O 6 and In 2 O 3 or In 2 O 3 and V 2 O 5 , with a precursor of MgO. The new compound was characterized by XRD, SEM, IR, UV-Vis and DTA-TG methods. Mg 3 In 4 V 6 O 24 was shown to crystallize in the triclinic system. Its unit cell parameters were calculated. The new compound is stable in air up to 1000°C and is a semiconductor (E g * 3.3 eV). Keywords Mg 3 In 4 V 6 O 24 Á Ceramic compound Á Solid-state reaction Á Magnesium vanadate(V) ExperimentalThe commercial reagents used for syntheses were:• 3MgCO 3 ÁMg(OH) 2 Á3H 2 O (a.p., POCh, Gliwice, Poland), as a precursor of MgO,

Mg-Doped ZnO-PVDF Composite Membranes by Interfacial Film-Forming Method for Adsorption and Piezoelectric Degradation of Tetracycline in Water

“…The single cell parameters of ZnO and MgZnO0.1 (Table S1) are shown in the Supporting Information. Results showed that the average cell parameter of ZnO is 4.9728, while that of MgZnO0.1 is 6.7068 . In summary, compositional and structural analyses confirm the successful loading of Mg onto ZnO to form MgZnO.…”

“…Results showed that the average cell parameter of ZnO is 4.9728, 23 while that of MgZnO0.1 is 6.7068. 24 In summary, compositional and structural analyses confirm the successful loading of Mg onto ZnO to form MgZnO.…”