New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and Silicon

Ballandras, S.; Courjon, E.; Bernard, Florent; Laroche, Thierry; Clairet, Alexandre; Radu, Ionut; Huyet, Isabelle; Drouin, Alexis; Butaud, E.

doi:10.1109/fcs.2019.8855991

Cited by 23 publications

(5 citation statements)

References 13 publications

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“…Deposition of diamond on Sc x Al 1-x N was also proposed to solve the problem of low crystal quality of Sc x Al 1-x N deposited on the rough surface of synthesized diamond [155]. SiO 2 was used to improve the temperature stability of the resonator because its positive TCF can be used for temperature compensation to the negative TCF of the piezoelectric layer [156][157][158]. The lattice and thermal expansion mismatch, and surface roughness are critical concerns of substrates for synthesizing high-crystal-quality piezoelectric layers.…”

Section: Electrodes and Substratesmentioning

confidence: 99%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

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Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

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Section: Electrodes and Substratesmentioning

confidence: 99%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

View full text Add to dashboard Cite

show abstract

“…Hybrid substrates with large impedance ratios (high Q), spurious free properties up to 14 GHZ, and almost 0 TCF (2 ppm K–1 at series resonance) [ 55 , 56 , 57 , 58 ].This technology is still in its infancy, the substrates are very expensive, At the same time, the resonant mode is accelerated (the frequency is increased), and the substrate linearity, resistivity, thermal conductivity [ 55 ], and CMOS (Complementary Metal-Oxide-Semiconductor) electronic compatibility are also the difficulties of this technology.…”

Section: Saw Filter Technologymentioning

confidence: 99%

Development and Application of SAW Filter

Chen

Zhu

2022

Micromachines

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With the in-depth advancement of the fifth generation (5G) mobile communication technology, the technical requirements for filters are also constantly improving. Surface acoustic wave (SAW) filters are widely used in home TV, mobile communications, radio frequency filters and radar due to their simple structure, few mask layers, easy miniaturization, and low cost. Through the continuous improvement of communication technology, SAW has developed into various high-performance acoustic filters from bulk SAW with the support of some new architectures, new materials and advanced modeling techniques. This paper analyzes and reviews the research situation of SAW filter technology.

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“…Among piezoelectric multilayer structures, a lithium niobate thin film on insulator (LNOI) substrate has been used in the preparation of SAW sensors due to its excellent piezoelectric properties [23][24][25][26]. As shown in Figure 1a, this substrate is composed of a LiNbO3 (LN) thin film, a SiO2 layer and a silicon (Si) substrate.…”

Section: Introductionmentioning

confidence: 99%

FEM Simulation of a High-Performance 128°Y–X LiNbO3/SiO2/Si Functional Substrate for Surface Acoustic Wave Gyroscopes

Liu

Sun

et al. 2022

Micromachines

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To obtain a high-performance surface acoustic wave (SAW) gyroscope substrate, the propagation characteristics and gyroscopic effect of Rayleigh waves in a 128°Y–X LiNbO3/SiO2/Si (LNOI) functional substrate were investigated with a three-dimensional finite element method. The influence of LNOI structural parameters on Rayleigh wave characteristics, including the phase velocity (vp), electromechanical coupling coefficient (K2) and temperature coefficient of frequency (TCF), were analyzed. The results demonstrate that the SiO2 layer compensates for the negative TCF of 128°Y–X LiNbO3 and enhances the K2 of the LNOI substrate. The Rayleigh wave velocity change of the LNOI substrate after rotations in different directions was studied. The gyroscope gain factor (η) represents the strength of the gyroscopic effect in the differential traveling wave SAW gyroscope and is defined. The ηy and ηz of the LNOI substrate with different structural parameters were investigated. Finally, an LNOI substrate with an hLN/λ of 0.2 and an hSiO2/λ of 0.05 was obtained by balancing the characteristic parameters, with a K2 of 3.96%, TCF of −18.75 ppm/°C and ηy of 0.26. The LNOI substrate has a better gyroscopic effect and temperature stability than the 128°Y–X LiNbO3 crystal. The LNOI substrate meets device miniaturization and integration needs.

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New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and Silicon

Cited by 23 publications

References 13 publications

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Development and Application of SAW Filter

FEM Simulation of a High-Performance 128°Y–X LiNbO3/SiO2/Si Functional Substrate for Surface Acoustic Wave Gyroscopes

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