New guideline for hydrogen treatment in advanced system LSI

Morifuji, E.; Kumamori, T.; Muta, M.; Suzuki, Kouji; Krishnan, Marimuthu; Brozek, Tomasz; Li, X.; Asano, Wataru; Nishigori, M.; Yanagiya, N.; Yamada, Shigeru; Miyamoto, Koji; Noguchi, T.; Kakumu, M.

doi:10.1109/vlsit.2002.1015459

Cited by 9 publications

(5 citation statements)

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“…Theses values can barely meet the BTI requirement at 1 V operation with additional 10% safety margin to 1.1 V. Note that a degraded PBTI is also reported in HfAlON gate dielectric MOSFETs, 6 which is even worse than the NBTI and attributed to gate impurity diffusion. The close V max-10 years for PBTI and NBTI in Al 2 O 3 MOSFETs simply occurs because no impurity, 6 hydrogen annealing, 13,14 or processing water 6,14 was added to the fully NiSi-NiGe/Al 2 O 3 CMOSFETs. Unfortunately, these values are lower than the 2.48 and −1.52 V for PBTI and NBTI, respectively, extrapolated for oxynitride MOSFETs at close EOT.…”

Section: Resultsmentioning

confidence: 99%

“…1,[6][7][8] In particular, the negative BTI ͑NBTI͒ of pMOSFETs is becoming an increasingly serious problem for complementary metal oxide semiconductor ͑CMOS͒ reliability. The NBTI of oxynitride gate dielectric pMOSFETs is mainly related to, e.g., nitrogen traps, [9][10][11][12] hydrogen, 13,14 moisture ͑H 2 O͒, 14 and impurity diffusion. 6 Both NBTI and positive BTI ͑PBTI͒ are even worse in metal oxide high-k CMOSFETs than in oxynitride devices.…”

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confidence: 99%

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Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Liao

Cheng

et al. 2005

J. Electrochem. Soc.

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We have studied bias-temperature instability ͑BTI͒ on fully nickel-silicided ͑NiSi͒ and germanided ͑NiGe͒ gates on high-k Al 2 O 3 n metal oxide semiconductor field effect transistors ͑MOSFETs͒ and pMOSFETs, respectively. At an equivalent oxide thickness of 1.7 nm, the NiSi/Al 2 O 3 pMOSFETs and NiGe/Al 2 O 3 nMOSFETs have a comparable threshold voltage ͑V t ͒ change of −34 and 33 mV at 85°C and 10 MV/cm stress for 1 h. This result is different from the more severe negative BTI ͑NBTI͒ degradation measured in oxynitride pMOSFET than positive BTI ͑PBTI͒ in nMOSFET. The extrapolated maximum voltage for 10 years' lifetime is 1.16 and −1.12 V from NiSi-NiGe/Al 2 O 3 complementary MOSFETs ͑CMOSFETs͒ that can barely meet the required 1 V operation with 10% safety margin. Further improvement is still required because the 1.8 nm oxynitride CMOSFETs have higher 10 years' lifetime operation voltages of 2.48 and −1.52 V for PBTI and NBTI, respectively.The continuous scaling down of metal oxide semiconductor field effect transistor ͑MOSFET͒ devices to the sub-100 nm scale requires oxynitride or metal oxide high-k gate dielectrics, with an ultrathin equivalent oxide thickness ͑EOT͒, to replace the conventional SiO 2 to reduce the gate dielectric leakage current. To further increase the drive current in the MOSFET, a metal gate is integrated with these high-k gate dielectrics. 1-5 However, one of the main concerns of such metal gate/high-k MOSFETs is the poor biastemperature instability ͑BTI͒. 1,6-8 In particular, the negative BTI ͑NBTI͒ of pMOSFETs is becoming an increasingly serious problem for complementary metal oxide semiconductor ͑CMOS͒ reliability. The NBTI of oxynitride gate dielectric pMOSFETs is mainly related to, e.g., nitrogen traps, 9-12 hydrogen, 13,14 moisture ͑H 2 O͒, 14 and impurity diffusion. 6 Both NBTI and positive BTI ͑PBTI͒ are even worse in metal oxide high-k CMOSFETs than in oxynitride devices. 1,6-8 In this paper, we have studied the BTI effect on fully silicided-germanided ͑NiSi-NiGe͒ dual gates on high-k Al 2 O 3 CMOSFETs 5,15-19 and compared the results with those of benchmark oxynitride devices. The fully silicided gate has the advantage of full process compatibility to current very-large-scale integrated fabrication technology. The Al 2 O 3 gate dielectric has a reasonably high k and good thermal stability for the amorphous type up to 1000°C. 5,12,15-21 In contrast to the worse NBTI than PBTI found in oxynitride devices, the NBTI and PBTI are close in fully NiSi-NiGe gate/Al 2 O 3 CMOSFETs. At 1.7 nm EOT, the extrapolated maximum operation voltage ͑V max-10 years ͒ for 10 years' lifetime, with 50 mV threshold voltage ͑V t ͒ change at 85°C, is 1.16 and −1.12 V from PBTI and NBTI, respectively. These results are comparable with or better than the reported HfAlON 6 and HfSiON data. 7 The high V max-10 years and close value for both NBTI and PBTI may be due to the processes without hydrogen and H 2 O that were used during high-k HfAlON and HfSiON deposition by atomic layer deposition using NH 3 and H ...

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Liao

Cheng

et al. 2005

J. Electrochem. Soc.

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“…The reliability of the NBTI significantly decreases when the transistor operates at high temperature, has a small gate length, and has a large content of boron, nitrogen, hydrogen, or water. The fact that hydrogen increases the NBTI was proven in [21]. Similarly, the lifetime of a semiconductor is significantly reduced because the change in Vth is different, depending on the boron content of the gate oxide and the thin gate length [22].…”

Section: Nbtimentioning

confidence: 99%

A Survey of Fault-Injection Methodologies for Soft Error Rate Modeling in Systems-on-Chips

Jeong¹,

Lee²,

Lee³

2016

Bulletin EEI

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The development of process technology has increased system performance, but the system failure probability has also significantly increased. It is important to consider the system reliability in addition to the cost, performance, and power consumption. In this paper, we describe the types of faults that occur in a system and where these faults originate. Then, fault-injection techniques, which are used to characterize the fault rate of a system-on-chip (SoC), are investigated to provide a guideline to SoC designers for the realization of resilient SoCs.

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“…Generally hydrogen in Si/SiO 2 interface structures is known as the pre-cursor of NBTI degradation. But few previous works handled process induced hydrogen incorporation during the back end-of-line (BEOL) processes, 4,5) whereas comprehensive researches for hot carrier (HC) effects by BEOL had been conducted. [6][7][8] Also, several methods, such as fluorine and deuterium incorporation were investigated to minimize the threshold voltage shift by NBTI.…”

Section: Introductionmentioning

confidence: 99%

Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime

Won-Joon¹,

Park²,

Kim³

et al. 2006

jjap

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When iron is evaporated in a dilute atmosphere of helium the deposit consists of very small particles whose size depends primarily on the helium pressure. If these particles are allowed to fall on to a ferromagnetic specimen they deposit preferentially at the domain boundaries. The Bitter patterns so formed can be examined optically or, for high resolution work, may be replicated and examined in the electron microscope.

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New guideline for hydrogen treatment in advanced system LSI

Cited by 9 publications

References 1 publication

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

Bias-Temperature Instability on Fully Silicided-Germanided Gates/High-k Al[sub 2]O[sub 3] CMOSFETs

A Survey of Fault-Injection Methodologies for Soft Error Rate Modeling in Systems-on-Chips

Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime

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