New Insight into Enhanced Superconductivity in Metals near the Metal-Insulator Transition

Osofsky, M. S.; Soulen, R. J.; Claassen, J. H.; Trotter, Geoff; Kim, H.; Horwitz, J. S.

doi:10.1103/physrevlett.87.197004

Cited by 52 publications

(50 citation statements)

References 31 publications

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“…33 All the above results suggest that superconductivity in W alloys films, regardless of the fabrication method, is attributed to their amorphous structure which is promoted by C, Si, and Ge impurities. This conclusion is further supported by Osofsky et al 37 model which relates this enhancement in T c to the level of disorder (i.e. resistivity) near the metal-insulator transition of the films.…”

supporting

confidence: 71%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

145

165

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Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO) 6 , as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is J c = 1.5 10 5 A/cm 2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.

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supporting

confidence: 71%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

145

165

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“…We therefore speculate that the enhanced T c in our thinnest films arises due to the reduced electron mean-free-path. Osofksy et al [11] have previously demonstrated that, near the MIT, reducing the mean-free-path leads to an increase in the electron screening length which in turn leads to an increase in the BCS electron-phonon interaction potential.…”

Section: Resultsmentioning

confidence: 99%

Focused-Ion-Beam Direct-Writing of Ultra-Thin Superconducting Tungsten Composite Films

Fenton

Warburton

2009

IEEE Trans. Appl. Supercond.

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Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Abstract-Tungsten composite films of thickness as low as 19 nm have been deposited using a 30 keV Ga + focused-ion-beam with tungsten carboxyl (W(CO) 6 ) as the gas precursor. Films of thickness 25 nm or more are superconducting with a transition temperature exceeding 5 K. Films in the thickness range 25 nm to 50 nm show an increasing T c for a decreasing film thickness. This correlates well with the measured dependence of the normal state resistivity upon film thickness. We attribute this behavior to an increase in the BCS electron-phonon interaction potential resulting from a reduction in the electron mean-free-path as the film thickness is reduced. In the light of these data we discuss the applicability of FIB-deposited tungsten for devices requiring ultra-thin superconducting films, including photon detectors and phase-slip qubits.

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“…Such a view, where both l and m Ã are rescaled by the proximity of the metal-to-insulator transition (MIT), is not so common although the influence of the proximity of the MIT on the superconducting behaviour of disordered metals has been studied extensively in order to explain the enhancement of T c in the vicinity of the MIT (Osofsky et al 2001(Osofsky et al , 2002Soulen et al 2003). Such an enhancement has not been reported for diamond so far.…”

Section: Doping-induced Normal-to-superconducting Transitionmentioning

confidence: 96%

Metal-to-insulator transition and superconductivity in boron-doped diamond

Bustarret

Achatz

Sacépé

et al. 2007

Phil. Trans. R. Soc. A.

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The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

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New Insight into Enhanced Superconductivity in Metals near the Metal-Insulator Transition

Cited by 52 publications

References 31 publications

Focused-ion-beam-induced deposition of superconducting nanowires

Focused-ion-beam-induced deposition of superconducting nanowires

Focused-Ion-Beam Direct-Writing of Ultra-Thin Superconducting Tungsten Composite Films

Metal-to-insulator transition and superconductivity in boron-doped diamond

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