New insight into organosilicon plasma‐enhanced chemical vapor deposition layers and their crosslinking behavior by calculating the degree of Si‐networking

Brenner, Thorben; Vissing, Klaus

doi:10.1002/ppap.201900202

Cited by 9 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Then, as seen in figure 7, the incident fluxes of film-forming units and consequently the deposition rate and film thickness are increased accordingly. These results are consistent with the results presented in figure 2 and also with the experimental observations by different authors who examined the effect of plasma excitation power on the deposition of organosilicon films [12,14,27,28]. The chemical composition and properties of the deposited film are significantly influenced by the elevation of the electron temperature.…”

Section: Numerical Results and Discussionsupporting

confidence: 93%

“…Typical spectra can provide some information about the carbon content and degree of cross-linking in the bulk material of the film, qualitatively. To scrutinize the elemental composition of the film quantitatively, x-ray photoelectron spectroscopy (XPS) or energy dispersive spectroscopy (EDS) is generally employed [7][8][9][10][11][12][13][14][15][16][17][18][21][22][23][24][25][26][27][28]. The stoichiometry of the film and its cross-linking is obtained by high-resolution analysis of the different components of C1s, Si2p, and O1s peaks.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma

Rayatnia,

Foroutan

2023

Phys. Scr.

View full text Add to dashboard Cite

Using numerical simulations of the multi-fluid equations along with a surface model, the deposition of thin organosilicon films on a spherical nanoparticle immersed in a low-pressure HMDSO/O2 plasma is studied. The effects of variation in the O2 fraction, electron temperature, gas pressure, and the processing temperature on the incident fluxes of the film precursors, the deposition rate, and film thickness, as well as on the relative concentrations of the silicon, oxygen, and carbon in the film structure are investigated. The results revealed that the deposition dynamics is dominated by the SiOC3H9 radical, produced mainly by the electron impact dissociation of the HMDSO molecules. Si 2 OC 5 H 15 + is the most populated ion and plays a prominent role in the deposition process via both direct incorporation and ion-induced stitching. The deposition rate and consequently the film thickness are enhanced with an increase in the electron temperature and the total gas pressure but are reduced with an increase in O2 fraction and the gas temperature. The increase in O2/HMDSO ratio and also the elevation of the electron and gas temperatures lead to an enhanced oxygen/carbon ratio in the film structure, an indication of a high degree of cross-linking. As the pressure rises, the oxygen content of the film increases initially while the carbon content declines, but the reverse is true at higher pressures, due to less effective fragmentation.

show abstract

Section: Numerical Results and Discussionsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma

Rayatnia,

Foroutan

2023

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Also, it can be assigned to Si-O-C asymmetric stretching. Furthermore, the Si-CH2-Si absorption band is usually observed at 1080 cm -1 -1040 cm -1 , but for oxygen containing coatings this peak is masked by the Si-O-Si band [43] , [44]. The absorption band at 840 cm -1 can be attributed to CH3 rocking vibrations in SiMe3, while the peak at 795 cm -1 is referred to CH3 rocking vibrations in SiMe2.…”

Section: Hmdso Polymerized Ftir Spectramentioning

confidence: 99%

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Dakroub

Duguet

Esvan

et al. 2021

Surfaces and Interfaces

View full text Add to dashboard Cite

Plasma polymerized organosilicon thin films were deposited in a MW-PECVD using hexadimethylsiloxane (HMDSO) as a precursor. Thin films were synthetized with different plasma conditions ranging from soft (low plasma energy) to hard (high plasma energy) ones. Quantitative 29 Si solid state NMR and FTIR spectroscopy were used to characterize the bulk composition. X-ray photoelectron spectroscopy (XPS) coupled with Density functional theory (DFT) calculations were used to determine the surface chemical composition. The bulk and the surface of the plasma polymerized HMDSO (PP-HMDSO) showed a complex chemical composition. The four main environments M, D, T and Q were present in the films. An additional environment Si(CH2)(CH3)3 denoted S was detected in the PP-HMDSO films. The chemical composition comparison showed a difference between the bulk and the surface of the films. Under soft plasma conditions, a high amount of SiOC3 termination was present in the bulk of the films. While, the SiO2C2 chains were highly present on the surface. On the other hand, under hard plasma conditions, the number of the SiOC3 termination increased on the surface and decreased in the bulk. Under soft plasma conditions, the PP-HMDSO structure was close to PDMS, while under hard plasma conditions, the PDMS similarity was lost.

show abstract

“…These fragments combine to form a ppHMDSO thin film. Deposition parameters such as oxidant addition, applied rf power, and substrate temperature has been shown to have a significant impact on the composition of organosilicon films produced by HMDSO-based plasmas. , Dattatray et al discovered that increasing applied rf power had the most significant effect on the relative intensities of the peaks at m / z = 18(H 2 O + ),28(CO + ,C 2 H 4 + ), and 44(CO 2 + and/or SiO + ) while decreasing or completely eliminating the relative intensities at 32(O 2 + ) and 147(Si 2 OC 5 H 15 + ) . The results indicate that increasing applied rf power accelerates monomer fragmentation and increases the oxidation process.…”

Section: Resultsmentioning

confidence: 99%

“…Deposition parameters such as oxidant addition, applied rf power, and substrate temperature has been shown to have a significant impact on the composition of organosilicon films produced by HMDSO-based plasmas. 22,27 ). 22 The results indicate that increasing applied rf power accelerates monomer fragmentation and increases the oxidation process.…”

Section: Chemical Compositions and Surfacementioning

confidence: 99%

Large-Scale Plasma-Polymerized Hexamethyldisiloxane Thin Films: Role of Interelectrode Distance and Excellent Corrosion Resistance

Wang

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

In comparison to the more traditional anticorrosion thin film coatings, the plasma polymerization approach offered a more efficient, dry, and straightforward procedure that made it possible to create dense films of several hundred nanometers in thickness, which has potential applications in metallic implant materials. In this paper, large-scale plasma polymerized hexamethyldisiloxane (ppHMDSO) thin film coatings were deposited on stainless steel substrates at different electrode distances to improve their corrosion resistance. The physicochemical properties and corrosion resistance of the ppHMDSO thin films as prepared at different electrode distances were characterized and gauged utilizing various characterization means. The results indicate that decreasing electrode distance accelerates monomer fragmentation and increases the oxidation process. The deposition rate and roughness of the ppHMDSO films both decreased as the electrode distance increased, while the carbonaceous group and hydrophobicity of the films enhanced. The ppHMDSO film prepared at an electrode distance of 40 mm obtained excellent elastic recovery and wear resistance and had an improved corrosion resistance, resulting in a reduction of 75% of the original corrosion behavior against the corrosion in Hank’s solution. The resulting large-scale ppHMDSO thin film coatings can be further employed in implants for tissue engineering and biomaterials.

show abstract

New insight into organosilicon plasma‐enhanced chemical vapor deposition layers and their crosslinking behavior by calculating the degree of Si‐networking

Cited by 9 publications

References 18 publications

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Large-Scale Plasma-Polymerized Hexamethyldisiloxane Thin Films: Role of Interelectrode Distance and Excellent Corrosion Resistance

Contact Info

Product

Resources

About

New insight into organosilicon plasma‐enhanced chemical vapor deposition layers and their crosslinking behavior by calculating the degree of Si‐networking

Cited by 9 publications

References 18 publications

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O2 plasma

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O2 plasma

Comparative study of bulk and surface compositions of plasma polymerized organosilicon thin films

Large-Scale Plasma-Polymerized Hexamethyldisiloxane Thin Films: Role of Interelectrode Distance and Excellent Corrosion Resistance

Contact Info

Product

Resources

About

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma

Simulation study of organosilicon coating of a spherical nanoparticle immersed in a low-pressure HMDSO/O₂ plasma