2008
DOI: 10.1002/pssc.200779435
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New insights in the electrodeposition mechanism of CuInSe2 thin films for solar cell applications

Abstract: The electrodeposition of CuInSe2, one of the most appropriate absorber for thin layer photovoltaic solar cells, is investigated with a rotating disc electrode by voltametry, steady‐state polarization and electrochemical impedance spectroscopy in dilute acidic solutions. Three main potential domains are distinguished. At low cathodic polarizations, binary Cu‐Se compounds are deposited. Indium starts to incorporate beyond a potential threshold which is associated with a current peak similar to a passivation peak… Show more

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Cited by 30 publications
(43 citation statements)
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References 18 publications
(25 reference statements)
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“…(13)) [27,39,40], which is also verified by the film structure in the next section. In this case, whether Ga 2 Se 3 proceeds via similar reaction to form CuGaSe 2 or CuInGaSe 2 still needs further evidence.…”
Section: Cyclic Voltammograms Of Quaternary Cu-in-ga-se Systemsupporting
confidence: 57%
“…(13)) [27,39,40], which is also verified by the film structure in the next section. In this case, whether Ga 2 Se 3 proceeds via similar reaction to form CuGaSe 2 or CuInGaSe 2 still needs further evidence.…”
Section: Cyclic Voltammograms Of Quaternary Cu-in-ga-se Systemsupporting
confidence: 57%
“…However, after selective dissolution of elemental Se, the atomic ratio of CuSe platelets [Se/Cu] was found to be close to unity (Fig. 10c) [106]. Increased Se concentration (over CuSe platelets) contributes to the formation of CuSe 2 phase.…”
Section: Electrochemical Formation Mechanism Of Cise/cigsementioning
confidence: 90%
“…Irrespective of the immersion time, no peak corresponding to Se (254 cm −1 ) was observed. Only characteristic Raman peaks corresponding to Cu 3 Se 2 (106,141,197, and 216 cm −1 ) and Cu 2 Se (261 cm −1 ) were observed [105]. Hence, at lower cathodic potential, Cu-Se binary co-exists as mixtures of Cu 3 Se 2 , Cu 2 Se, CuSe, and Se(0) [107,108].…”
Section: Electrochemical Formation Mechanism Of Cise/cigsementioning
confidence: 92%
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“…Chassaing et al . [107] proposed the following reaction scheme based on their results: [109] . This proposed mechanism requires, of course, that the electrode surface should be continually refreshed in Cu 2 Se and Se.…”
Section: Cu(inga)se 2 Via Simultaneous Deposition Of All Elementsmentioning
confidence: 99%