New investigation of III–V compounds by the low-angle mid-IR lightscattering technique

Yuryev, Vladimir A.; Калинушкин, В. П.

doi:10.1016/0921-5107(94)01184-2

Cited by 4 publications

(6 citation statements)

References 3 publications

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“…39,47,[52][53][54][55][56] This method is based on the same physical principles as LALS, hence it possesses all its unique opportunities, including the ability to study LSRDs which has found its most promising realization in the optical beam induced LALS ͑OLALS͒ mode of SLALS. [47][48][49]56,57 …”

Section: E Discussion Of Lalsmentioning

confidence: 99%

“…4͒. 11,12,14,[31][32][33][34][35][36][37][38][39] References 35 and 36 give the formulas for estimating energy level location from the LALS temperature dependencies…”

Section: Dependence Of Light Scattering On Sample Temperaturementioning

confidence: 99%

“…The activation energies are evaluated with respect to the corresponding band ͑conduction or valence͒ depending on the conductance type assumed or determined for each kind of defects. 14,16,[35][36][37][38][39] Two steps observed in Ge correspond to two different point centers which freeze out at different sample temperatures, have different thermal activation energies, but contained in the same LSDAs.…”

Section: ͑11͒mentioning

confidence: 99%

“…[35][36][37][38][39] In these articles LSDAs were modeled by spherical p-type regions enriched with In or Ga microinclusions and In P and Ga As acceptors, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…3, -33 41 To evaluate C (and consequently |δε | which is necessary e.g. for estimating the activation energies of the centers constituting LSDAs [33][34][35][36][37][38][39][40][41] ) one must use data of different techniques, such as EBIC, laser tomography, etching, etc., that reduces the reliability of the information ob-tained. One can never vouch for the equivalence of defects registered in LALS measurements and those revealed by other methods.…”

Section: Introductionmentioning

confidence: 99%

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Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

Калинушкин

Yuryev

Astafiev

1999

Review of Scientific Instruments

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A method of the mid-IR-laser microscopy has been recently proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.Special attention is paid upon potential applications of the above methods as characterization and testing techniques in the semiconductor science and industry. It is concluded that elastic mid-infrared laser light scattering is a basis for the development of a variety of research techniques and instruments which could be useful in different branches of basic and applied research work in the field of defect engineered semiconductors as well as for the development of devices for quality inspections in the semiconductor industry. Being contactless, non-destructive and non-polluting, techniques based on mid-infrared light scattering could also find many applications for automation of the technological process control as well as the process remote monitoring.

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Section: E Discussion Of Lalsmentioning

confidence: 99%

“…4͒. 11,12,14,[31][32][33][34][35][36][37][38][39] References 35 and 36 give the formulas for estimating energy level location from the LALS temperature dependencies…”

Section: Dependence Of Light Scattering On Sample Temperaturementioning

confidence: 99%

Section: ͑11͒mentioning

confidence: 99%

“…[35][36][37][38][39] In these articles LSDAs were modeled by spherical p-type regions enriched with In or Ga microinclusions and In P and Ga As acceptors, respectively.…”

Section: Introductionmentioning

confidence: 99%