New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

Kociniewski, T.; Moussodji, Jeff; Khatir, Zoubir; Berkani, Mounira; Lefebvre, Stéphane; Azzopardi, Stéphane

doi:10.1109/led.2011.2182492

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…In fact, we have previously demonstrated that diode and IGBT cross section can remain operational after cross section [4]. Micro-Raman spectroscopy is a nondestructive and powerful technique [5].…”

Section: Introductionmentioning

confidence: 99%

μ-Raman spectroscopy for stress analysis in high power silicon devices

Kociniewski

Moussodji²,

Khatir³

2014

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

μ-Raman spectroscopy for stress analysis in high power silicon devices

Kociniewski

Moussodji²,

Khatir³

2014

Microelectronics Reliability

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“…The main disadvantage of LIT is the requirement of employing an appropriate thermal wave frequency, otherwise some of the defects cannot be detected. IR cameras have also recently been used to perform thermal mapping of IGBT cross sections [44]. This study shows the feasibility of a method to characterise electrical and thermal distributions in vertical sections with the aid of a high resolution IR camera.…”

Section: Introductionmentioning

confidence: 93%

State Detection of Bond Wires in IGBT Modules Using Eddy Current Pulsed Thermography

Tian

Cheng

et al. 2014

IEEE Trans. Power Electron.

168

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Insulated gate bipolar transistor (IGBT) modules are important safety critical components in electrical power systems. Bond wire lift-off, a plastic deformation between wire bond and adjacent layers of a device caused by repeated power/thermal cycles, is the most common failure mechanism in IGBT modules. For the early detection and characterisation of such failures, it is important to constantly detect or monitor the health state of IGBT modules， and the state of bond wires in particular. This paper introduces eddy current pulsed thermography (ECPT), a non-destructive evaluation (NDE) technique, for the state detection and characterisation of bond wire lift-off in IGBT modules. After the introduction of the experimental ECPT system, numerical simulation work is reported. The presented simulations are based on the 3-D electromagnetic-thermal coupling finite-element-method (FEM) and analyse transient temperature distribution within the bond wires. This paper illustrates the thermal patterns of bond wires using inductive heating with different wire statuses (lifted-off or well bonded) under two excitation conditions: non-uniform and uniform magnetic field excitations. Experimental results show that uniform excitation of healthy bonding wires, using a Helmholtz coil, provides the same eddy currents on each, whilst different eddy currents are seen on faulty wires. Both experimental and numerical results show that ECPT can be used for the detection and characterisation of bond wires in power semiconductors through the analysis of the transient heating patterns of the wires. The main impact of this work is that it is the first time electromagnetic induction thermography, so-called ECPT, has been employed on power/electronics devices. Because of its capability of contactless inspection of multiple wires in a single pass, and as such it opens a wide field of investigation in power/electronics devices for failure detection, performance characterisation and health monitoring.

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