2022
DOI: 10.1007/s12274-022-4971-5
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New materials and designs for 2D-based infrared photodetectors

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Cited by 24 publications
(14 citation statements)
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“…, where h and e are the reduced Planck constant and elementary charge, respectively. 50,54 In Fig. 6(a) and (b), the maximum values of EQE for A-and Ztype GeSe p-i-n homojunctions can reach 54.5% and 69.7%, respectively, higher than those of graphene/InSe (50.4%) 51 and b-AsP (6.1%).…”
Section: Photoelectric Performance Of the ML Gese P-i-n Homojunctionmentioning
confidence: 94%
“…, where h and e are the reduced Planck constant and elementary charge, respectively. 50,54 In Fig. 6(a) and (b), the maximum values of EQE for A-and Ztype GeSe p-i-n homojunctions can reach 54.5% and 69.7%, respectively, higher than those of graphene/InSe (50.4%) 51 and b-AsP (6.1%).…”
Section: Photoelectric Performance Of the ML Gese P-i-n Homojunctionmentioning
confidence: 94%
“…4 (a and b) Technical status of photodetectors. 8,38,[59][60][61][62][63][64] (c) Flexible organic photodiodes. Reproduced with permission.…”
Section: Flexible Planar Devicesmentioning
confidence: 99%
“…However, the constraints on the sensitivity of devices often manifest through either inadequate photoresponsivity or elevated thermionic emission-induced dark current, attributed to compromised internal gain and diminished interfacial potential barriers. [4,108,109] Leveraging the large mismatch of the band alignment-induced large band offset and high interfacial potential barrier, photodetectors with broken gaps can further block the thermal emission-induced dark current, demonstrating a high on/off ratio and fast photoresponse speed. [110][111][112][113] Wang et al reported a tunneling phototransistor based on a WSe 2 /Bi 2 Se 3 vdW heterojunction with type-III band alignment, as shown in Figure 4a.…”
Section: Suppressing Dark Current With Broken-gap (Type-iii) Band Ali...mentioning
confidence: 99%
“…[1][2][3] Conventional IR photodetectors are typically based on bulk compound semiconductors, for example, HgCdTe, InGaAs, InSb, and type-II InAs/GaSb superlattices, which currently dominate the commercial market. [4,5] However, these devices still face several challenges, such as uncertain elemental composition, complex manufacturing procedures, and strict operating cryogenic environments. [6][7][8] The emergence of atomically thin 2D materials, such as graphene, black phosphorus (BP), tellurium (Te), palladium diselenide (PdSe 2 ), and platinum ditelluride (PtTe 2 ), stacked by weak van der Waals (vdW) interactions offers a promising solution to overcome these challenges.…”
Section: Introductionmentioning
confidence: 99%