New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

“…The figure also clearly shows a hysteresis in the curve, caused by transient effect. The majority carriers introduced in the silicon film by EVB tunneling also have a pronounced impact on the drain current transients observed when the drain current is switched from a high to a low front gate voltage [16][17]. This is illustrated in Fig.…”

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

“…The positive charges trapped in the field oxide and buried oxide are not sufficient enough to produce an inversion layer, so that there is no radiation-induced leakage and threshold voltage shift to be observed. Before irradiation, a second hump in the transconductance characteristic is noticeable close to V g =1.2-1.3V, and the value of the second transconductance g m peak exceeds the normal peak due to the electron-valence-band (EVB) tunneling [5]. The electrons in the body region can tunnel from the valence band across the gate dielectric to the ploysilicon under a sufficient vertical electric field, when the gate oxide thickness is less than 2 nm [13].…”

“…Meanwhile, there is no change in the gate current before and after irradiation, as shown in Fig.2. The attenuation of the second g m peak implies that fewer holes are stored in the body of SOI MOSFETs after irradiation [5]. There are two possibilities for the decline of the second g m peak: (1) the EVB tunneling is suppressed after irradiation, with fewer holes generated in the floating body, because more traps generated in the gate oxide and interface between the gate oxide and the silicon; (2) the excess holes remove more quickly from the body after radiation so that there are less excess holes stored in the body region.…”

“…Whereas the aggressive shrinking of gate oxide thickness in partially-depleted (PD) SOI MOSFETs leads to the gate-induced floating body effects (GIFBEs) in the linear operation region [5,6], which have many similarities to the conventional drain-induced floating body effects (DIFBEs) at high drain bias [7]. Once the GIFBEs happen, a Lorentzian-like noise component will superimpose to the low-frequency (LF) noise due to the appearance of the excess noise [8,9], which is similar to the phenomenon that the DIFBEs in PDSOI devices give rise to the Kink-related excess noise [10,11].…”

Estudo teórico-experimental do transitório da corrente de dreno e do tempo de vida de geração em tecnologias SOI MOSFETs.

“…O caso inverso ocorre quando a porta varia da inversão fraca para inversão forte ("off" para "on"), neste caso as lacunas se recombinam para aumentar a região de depleção e atingir um maior valor da tensão de limiar correspondente a condição de equilíbrio. Dispositivos com reduzidas espessuras de óxido de porta estão sujeitos a outro FBE, que está associado com o tunelamento direto através do óxido de porta 51,97 Por fim, foi estudado neste trabalho o efeito de corpo flutuante com a variação da geometria em dispositivos FinFET de porta tripla, com e sem a região de implantação de HALO. Em dispositivos mais estreitos observa-se uma redução na transcondutância máxima e uma redução na amplitude do segundo pico da transcondutância.…”