Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

Abstract

The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present understanding and the difficulties associated with modeling of irradiation-induced device degradation. Finally, an outlook is given for some emerging semiconductor technologies such as e.g. SiGe, strained silicon, Ge and GeOI. Some aspects of cryogenic irradiations, of key importance for space applications, are also briefly mentioned.