New Metal Organic Gas Supply System by Using an Advanced Flow Control System

Yamaji, Michio; Yamashita, S.; Hidaka, Atsushi; Nagase, Masaaki; Ikeda, Nobukazu; Sugawa, Shigetoshi; Ohmi, Tadahiro

doi:10.1149/1.3700908

Cited by 3 publications

(9 citation statements)

References 3 publications

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“…Here, the TMA vapor pressure is 5.3 kPa at 50 ˚C. TMA was supplied to the chamber by using a high temperature flow control system (HT-FCS) [8]. By using this system, TMA is supplied to the chamber with high accuracy, compared to a conventional bubbling gas supply system.…”

Section: Methodsmentioning

confidence: 99%

“…To define MIM area, SiO 2 films were deposited by atmospheric pressure chemical vapor deposition with SiH 4 and O 2 mixed gases at 400°C and the wet etching was carried out after photo lithography. Al 2 O 3 films were deposited by ALD with accurate process gasses supply system [8]. The TMA was supplied at 50°C to the chamber with the high temperature flow control system (HT-FCS) [8].…”

Section: Methodsmentioning

confidence: 99%

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Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

et al. 2016

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High-k oxide material with a high capacitance density, low leakage current density, high-dielectric breakdown voltage and small quadruple voltage coefficient of the capacitance is important for on-chip metal-insulator-metal (MIM) capacitors as well as gate insulators for semiconductor power devices. So in order to improve the quality of such films, a post-deposition process, such as annealing is expected to be effective. In this paper, we carried out various annealing steps after deposition of Al2O3 films with thermal ALD. The electrical characteristics of these Al2O3 films were evaluated. Annealing was proven to be effective in improving the Al2O3 film quality decrease the leakage current and the fixed charge. For O2 annealing at 400°C of MIM capacitor structures containing Al2O3 films deposited with thermal ALD using H2O at a relatively low temperature of 75°C. We achieved a leakage current density of 10-9A/cm2 level and a capacitance density above 10fF/μm2. However, it it is necessary to improve the voltage dependence of the capacitance. For future optimization not only the post-deposition process should be investigated but also the ALD deposition itself, including the selection of the oxidizing co-reactant.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

et al. 2016

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“…Liquid TMA was stored in a tank, and heated to 50 o C to be vaporized. Here, the TMA vapor pressure is 5.3 kPa at 50 o C. TMA was supplied to the chamber by using a high temperature flow control system (HT-FCS) (15). By using this system, The flow rate or the quantity of TMA can be supplied accurately to the chamber, compared to a conventional bubbling gas supply system.…”

Section: Methodsmentioning

confidence: 99%

Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal

Suwa¹,

Teramoto²,

Koda³

et al. 2016

ECS Trans.

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The influence of the post deposition anneal (PDA) to the Al2O3 film quality was investigated. In the case of PDA using Ar/O2 plasma, the Al2O3/substrate interface quality was degraded because the oxidation at Al2O3/substrate interface proceeds. In the case of PDA using H2O, the gate leakage current can be decreased. However, H2O annealing induced the voltage dependence of capacitance due to increase the traps in the Al2O3 film. It is considered that the H2O annealing is effective to reduce the gate leakage current and fixed charges in the Al2O3 film but is induced to increase the traps in the film.

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“…So far, FCS system could not be used for heated gases such as directly vaporized MOCVD gasses with low vapor pressure. Thus, HT-FCS was developed, which incorporates a pressure sensor that can be used at 250 ˚C (8). Using HT-FCS system, TMA could be supplied to the chamber with high accuracy, compared to a conventional bubbling gas supply system.…”

Section: Methodsmentioning

confidence: 99%

“…During the dielectric formation process, gas flow control is an important factor that influences the concentration of process gas and the pressure of the process chamber (8)(9)(10)(11)(12). Additionally, controlling the gas flow accurately makes process costs lower, because the minimum necessary source gas is used at each cycle of ALD.…”

Section: Introductionmentioning

confidence: 99%

Effect of Process Temperature of Al₂O₃ Atomic Layer Deposition Using Accurate Process Gasses Supply System

Sugita¹,

Koda²,

Suwa³

et al. 2015

ECS Trans.

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Al2O3 is one of the most expectancy high-k materials for high density on-chip metal-insulator-metal (MIM) capacitors as well as gate insulator for composed semiconductor power devices. In this paper, using the developed atomic layer deposition (ALD) process equipment with multiple oxidation methods and accurate process gas supply system adapted to high temperature usage, the impact of the process temperature on the electrical characteristics of Al2O3 films was investigated. It was found that the substrate material must not be oxidized at the trimethylaluminum (TMA) - oxidation step of ALD. An excessive high temperature may cause decomposition of TMA, so the process temperature should be controlled sufficiently low in order to obtain one layer TMA adsorbing on the wafer. However, this tends to cause lowering oxidation ability, so it is necessary to remove carbon in the Al2O3 films after the ALD. Post ALD process, such as post deposition anneal (PDA) is required.

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New Metal Organic Gas Supply System by Using an Advanced Flow Control System

Cited by 3 publications

References 3 publications

Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal

Effect of Process Temperature of Al₂O₃ Atomic Layer Deposition Using Accurate Process Gasses Supply System

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New Metal Organic Gas Supply System by Using an Advanced Flow Control System

Cited by 3 publications

References 3 publications

Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing

Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O2 Post Deposition Annealing

Oxidizing Species Dependence of the Interface Reaction during Atomic-Layer-Deposition Process and Post-Deposition-Anneal

Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System

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Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

Low Leakage Current Al₂O₃ Metal-Insulator-Metal Capacitors Formed By Atomic Layer Deposition at Optimized Process Temperature and O₂ Post Deposition Annealing

Effect of Process Temperature of Al₂O₃ Atomic Layer Deposition Using Accurate Process Gasses Supply System