New Observations on the Correlation Between Hole-Trapping Transformation and SILC Generation Under NBTI Stressing

Charge Trapping Control in MOS Capacitors

“…The physical mechanisms responsible for charge trapping are rather complex and dependent on the fabrication process, the temperature and the electrical stress applied to the device [8], [14]- [18]. Most works focus on the design and characterization of materials and structures to reduce the effects of charge trapping.…”

Second order sigma-delta control of charge trapping for MOS capacitors

“…In general, this phenomenon alters device performance, affecting its circuital features and even reducing its effective lifetime. The physical mechanisms responsible for charge trapping are rather complex and dependent on fabrication processes, temperature, and electrical stresses applied to the device [10][11][12][13][14].…”