This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures in the material. We produce a porous silicon derivative, which is mostly hidden in the emitter of solar cell. Research of the initial and modied solar cells was made by measuring currentvoltage characteristics under illumination of a 5000 K xenon lamp. Spectrally resolved studies of currentvoltage characteristics were carried out using radiation of halogen lamps and diraction grating monochromator. Studies revealed that the manufacturing of buried porous silicon structure improves solar cell performance by increasing the ll factor of the modied solar cell currentvoltage characteristics, maximum output power and eciency, when compared to unmodied ones. Spectral studies revealed that the above-mentioned improvement diers for various sections of light spectrum. Largest relative enhancement of solar cell current was observed at the wavelengths of ∆λ = 450550 nm. We consider the cumulative result of several eects resulting in solar cell eciency enhancement. Most of them were the inuence of porosity on eective optical path length and better anti-reecting properties of multiple porous structures.