New perspectives for heavily boron-doped diamond Raman spectrum analysis

Kinetics of the Organic Compounds and Ammonium Nitrogen Electrochemical Oxidation in Landfill Leachates at Boron-Doped Diamond Anodes

“…Additionally, the Fano-shaped peaks located at ca. 500 cm −1 (BWF function #1), 1200 cm −1 (BWF function #2), and 1332, 1317, and 1310 cm −1 (BWF function #3) were modelled using the Breit-Wigner-Fano function (see Equation ( 6)) [47] which is shown in Figure 3a-c insets. Additionally, the Fano-shaped peaks located at ca.…”

“…The amplitude of the Fano-shaped sp 3 (BWF#3) peak is lower for the highly doped samples, but the peak width (ω) is wider, which is attributed to more boron incorporation into the diamond lattice [43]. According to an investigation by Mortet and co-authors [47], the asymmetric parameter of the diamond sp 3 line (q3) can be used as a marker of the carrier concentration. Only the 10 k and 15 k samples indicated significant asymmetry (10 k q3 = 1.77 and 15 k q3 = 2.11), and it should be noted that the q3 value of those electrodes proves high incorporation of boron atoms during MWPACVD growth.…”

Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

“…[ 21–23 ] Analysis of the boron‐related “500 cm −1 ” band has been employed as a simple and non‐destructive method to calculate the boron concentration in metallic polycrystalline and CVD BDD films with heavily boron doping of 10 20 –10 22 cm −3 . [ 24 ] A method for determining boron concentration in BDD by analyzing the width or position of undisturbed phonon density of states or zone center phonon lines in Raman spectroscopy has also been reported in 2020, [ 25,26 ] which have mostly focused on heavily boron doped diamonds. But the semiconducting BDD samples, including most of high‐pressure and high‐temperature (HPHT) BDD single crystals and all natural type IIb diamonds, have been ruled out by this method because of their much lower boron content (several to hundreds of ppms) beyond the calculated scope [ 19,24–27 ] and a strikingly different Raman spectrum with boron‐related bands at 602, 880, 938, 1048, 1162 and 1225 cm −1 .…”

“…[ 24 ] A method for determining boron concentration in BDD by analyzing the width or position of undisturbed phonon density of states or zone center phonon lines in Raman spectroscopy has also been reported in 2020, [ 25,26 ] which have mostly focused on heavily boron doped diamonds. But the semiconducting BDD samples, including most of high‐pressure and high‐temperature (HPHT) BDD single crystals and all natural type IIb diamonds, have been ruled out by this method because of their much lower boron content (several to hundreds of ppms) beyond the calculated scope [ 19,24–27 ] and a strikingly different Raman spectrum with boron‐related bands at 602, 880, 938, 1048, 1162 and 1225 cm −1 . [ 5 ] Therefore, finding an accurate and non‐destructive calibration of boron content in the semiconducting BDD samples is still one of challenges in material science.…”

“…The electronic Raman effect can provide direct information to reflect the bound states of acceptors (donors) from holes (electrons) in substitutional semiconductors, which is well documented for Si and Ge. [ 25,28–32 ] The spin‐orbit split ground states were experimentally observed in natural and 13 C type IIb diamonds by Raman spectrum, [ 30 ] indicating their high sensitivity to the composition and content of substitutional impurities, and thus permit us to study the symmetry and band parameters of the valence band in semiconducting diamonds. In this letter, we show a systematic study on the analysis of electronic Raman effect on a series of BDD single crystals containing boron content in the range from 0 to ~10 4 ppm by Raman spectroscopy.…”