New phase change material for optical recording with short erase time

Barton, Roger; Davis, Charles R.; Rubin, K.; Lim, G.

doi:10.1063/1.97031

Cited by 71 publications

(14 citation statements)

References 6 publications

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“…Therefore, the annealed film has two phases structure including Ge and -Cu Ge. The equation for Kissinger's method [5], [6] is (1) where is the heating speed in the unite of temperature degree per minute (K/min. ); Tx is the phase change temperature; and is the Boltzmann constant (8.6 10 eV/K).…”

Section: Resultsmentioning

confidence: 99%

GeCu Thin Films for Inorganic Write-Once Media

Kuo

Tsai

et al. 2007

IEEE Trans. Magn.

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The Ge 100 x Cu x thin films (x = 50 at %-69 at %) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of Ge and Cu targets. Microstructures was analyzed by X-ray diffractometer. The optical and thermal properties were measured from static test. It was found that the as-deposited phase was single supersaturated -Cu 3 Ge phase and it was transformed to Ge and -Cu 3 Ge coexisting phases after annealing at 400 C. The reflectivity of as-deposited film was higher than that of annealed film.

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Section: Resultsmentioning

confidence: 99%

GeCu Thin Films for Inorganic Write-Once Media

Kuo

Tsai

et al. 2007

IEEE Trans. Magn.

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“…In order to achieve lower the power consumption, we have investigated Sb-Se phase change materials which have a lower melting temperature than Ge 2 Sb 2 Te 5 . Several studies have been performed with Sb-Se alloys to investigate these materials for an application in rewritable optical disks applications (Barton et al 1986;Dimitrov et al 1996;Babeva et al 2000. However, SbSe alloys have a low absorption coefficient in the wavelength range of 750-830 nm and the noise level increases after repetitive rewriting on a disk.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and crystallization behavior of Sb x Se100−x thin films

et al. 2006

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The structural transformation and transformation kinetics of Sb x Se 100Àx films (60 £ x £ 70) were studied to investigate the feasibility of applying Sb x Se 100Àx alloys in phase-change nonvolatile memories. The temperature-dependent van der Pauw measurements, Hall measurements, X-ray diffraction and a static tester were used to investigate the electrical properties and crystallization behavior of the Sb x Se 100Àx films. The sheet resistance difference between amorphous and crystalline state was higher than 10 4 X per square According to Hall measurement, Sb x Se 100Àx films have p-type conduction and the Hall mobility and carrier concentration increases with the increase in Sb content. The crystalline structure of the metastable phase of Sb x Se 100Àx alloys, which plays a major roll in fast crystallization, is similar to that of Sb 2 Te (rhombohedral structure). The transition temperature, sheet resistance and activation energy for transformation decrease as the amount of Sb increases in the Sb x Se 100Àx film. Applying the Kissinger method, the activation energies for crystallization were in the range from 1.90 ± 0.15 to 4.16 ± 0.28 eV. The desired crystallization speed can be obtained by a systematic change of the composition owing to the variation of the activation barrier with stoichiometry.

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“…Therefore, intense research efforts have been made to explore novel Te-free Se-based phase change materials, such as In-Se and Sb-Se. [5][6][7][8] Especially, Sb-Se alloys exhibit both good electrical properties and excellent optical properties. 7 Sung-Min Yoon et al fabricated PCM device using Sb 65 Se 35 showed a good electrical threshold switching characteristic, as well as shorter SET time and smaller RESET current, compared with those of GST.…”

Section: -3mentioning

confidence: 99%

Fast reversible laser-induced crystallization of Sb-rich Zn-Sb-Se phase change material with excellent stability

et al. 2015

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We present a new reversible phase-change medium Sb-rich Zn-Sb-Se film, which possesses a large difference in both optical and electrical constant. The doped-ZnSb, sub-formed Zn-Se, and exhausted Sb-Se3/2 co-influence the physical properties. Typically, there is ∼105 resistance ratio and ∼14% relative reflectivity change in Zn19Sb45.7Se35.3 film when switched by electricity or laser pulses between amorphous and crystalline states. The higher Tc (∼250°C), larger Ea (∼8.57eV), better 10-yr data retention (∼200.2°C), higher crystallization resistance (∼3 × 103Ω/□ at 300°C-annealled) and relative lower melting temperature (∼550.2°C) are exhibited in Zn19Sb45.7Se35.3 film. Importantly, a short crystalline time (∼80ns at 70mW) of the ideal Zn19Sb45.7Se35.3 film can be obtained without sacrificing room-temperature stability.

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New phase change material for optical recording with short erase time

Cited by 71 publications

References 6 publications

GeCu Thin Films for Inorganic Write-Once Media

GeCu Thin Films for Inorganic Write-Once Media

Electrical properties and crystallization behavior of Sb x Se100−x thin films

Fast reversible laser-induced crystallization of Sb-rich Zn-Sb-Se phase change material with excellent stability

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