New projection optics and aberration control system for the 45-nm node

Yoshihara, Toshiyuki; Takeshita, Bunsuke; Shigenobu, Atsushi; Hasegawa, Yasuo; Ohsaki, Y.; Mishima, Kazuhiko; Miura, Seiya

doi:10.1117/12.711375

Cited by 7 publications

(7 citation statements)

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“…Figure 2.1 shows the projection lens performance measured by PMI for both the FPA-7000AS7 and the FPA7000-AS5 1 AS7 is now at the final adjustment phase, the estimated value with consideration of adjustment error is shown. The AS7 lens will achieve a total RMS of less than 4mλ, while the AS5 lens is below 6mλ.…”

Section: Projection Lensmentioning

confidence: 99%

Immersion exposure tool for 45-nm HP mass production

et al. 2007

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Canon has renewed its platform of exposure tools. The new platform, the FPA-7000, is designed to cover multiple generations. The lens performance of the FPA-7000AS5 achieves less than 6mλ, while that of the AS7 is estimated to be less than 4mλ. The illumination performance meets the target required for the 45nm node. The in-situ aberration monitor, called iPMI, attains the measurement repeatability of 1.45mλ. Focus and overlay units have improved process robustness. A solution tool for optimization is introduced to be connected with the FPA-7000. Moreover, latest studies of immersion, such as nozzle pressure, temperature control and defect inspection result are reported, and we also discuss the possibility of high-refractive-index immersion.

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Section: Projection Lensmentioning

confidence: 99%

Immersion exposure tool for 45-nm HP mass production

et al. 2007

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“…Several in situ measurement techniques based on different measurement principles have been all available [2][3][4][5][6][7][8]. Based on the line diffraction interferometer principle, Canon has developed the in situ phase measurement interferometer (iPMI) technique [6], which is used on the 45 nm hp devices enabled lithographic tools FPA-7000AS7 and has a measurement repeatability of 2 mλ [2,5].…”

Section: Introductionmentioning

confidence: 99%

“…To make sure the aberrations are kept in tolerance, an in situ aberration measurement technique is necessary to retrieve the aberrations of the projection lens periodically and quickly [4]. The accuracy of the in situ measurement technique is required to be higher and higher, as the RMS tolerance of aberrations decreases [5].…”

Section: Introductionmentioning

confidence: 99%

“…Based on the line diffraction interferometer principle, Canon has developed the in situ phase measurement interferometer (iPMI) technique [6], which is used on the 45 nm hp devices enabled lithographic tools FPA-7000AS7 and has a measurement repeatability of 2 mλ [2,5]. Based on the lateral shearing interferometer principle, ASML has developed the integrated lens interferometer at scanner 0003-6935/09/193654-10$15.00/0 © 2009 Optical Society of America (ILIAS) technique, and its repeatable accuracy achieves 2:5 mλ [7].…”

Section: Introductionmentioning

confidence: 99%

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Translational-symmetry alternating phase shifting mask grating mark used in a linear measurement model of lithographic projection lens aberrations

Qiu

Wang

et al. 2009

Appl. Opt.

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A linear measurement model of lithographic projection lens aberrations is studied numerically based on the Hopkins theory of partially-coherent imaging and positive resist optical lithography (PROLITH) simulation. In this linearity model, the correlation between the mark's structure and its sensitivities to aberrations is analyzed. A method to design a mark with high sensitivity is proved and declared. By use of this method, a translational-symmetry alternating phase shifting mask (Alt-PSM) grating mark is redesigned with all of the even orders, AE3rd and AE5th order diffraction light missing. In the evaluation simulation, the measurement accuracies of aberrations prove to be enhanced apparently by use of the redesigned mark instead of the old ones.

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“…Given these factors, we measure or estimate the aberration and control the positions and orientations of optical elements in order to calculate the optimal lens adjustment. During exposure, calculation of the optimal lens adjustment should be performed within 100 ms (2) .…”

Section: Introductionmentioning

confidence: 99%

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

Shinano

Yoshihara

Miyashiro

et al. 2010

JAMDSM

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The present paper considers optimization of lens adjustment in semiconductor lithography equipment. For improving productivity, the laser irradiation power of recent semiconductor lithography equipment has been boosted, which causes significant aberration due to heating during exposure. The aberration of the equipment must be measured or estimated in order to adjust the positions and orientations of the lenses. Since this adjustment is performed sequentially during exposure, the optimization problem to obtain optimal lens adjustment should be solved within a time as short as 100 ms. Although the problem of calculating the optimal lens adjustment can be naturally formulated as a convex minimization problem, in such a formulation the objective function is convex but includes several nondifferentiable points. Hence, optimization methods based on derivatives cannot be applied. Other approaches using derivative-free optimization or meta-heuristic methods cannot guarantee that the obtained solutions are truly optimal. Therefore, we formulate the optimization problem as quadratically constrained and second-order cone programming problems, which can be handled by solvers using an interior point method. Using the proposed formulations, computational experiments demonstrate that the optimal lens adjustment is obtained in a practical computational time, which is much less than 100 ms.

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New projection optics and aberration control system for the 45-nm node

Cited by 7 publications

References 0 publications

Immersion exposure tool for 45-nm HP mass production

Immersion exposure tool for 45-nm HP mass production

Translational-symmetry alternating phase shifting mask grating mark used in a linear measurement model of lithographic projection lens aberrations

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

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