2019
DOI: 10.1007/978-3-030-21970-3_4
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New Properties and Prospects of Hot Intraband Luminescence for Fast timing

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Cited by 3 publications
(1 citation statement)
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“…As a result, the rise time of the luminescence caused by their recombination is determined by the capture stage duration, which can be below 1 ps [51]. Hot intraband luminescence (IBL) [52], [53], [54] occurs as a process competing to thermalization before the capture stage, therefore its decay time is determined by the thermalization stage duration. In some materials (e.g., BaF2), holes at the uppermost core levels have too low energy for Auger recombination, so they undergo self-trapping [55] and float to the top of the core band.…”
Section: Inorganic Scintillatorsmentioning
confidence: 99%
“…As a result, the rise time of the luminescence caused by their recombination is determined by the capture stage duration, which can be below 1 ps [51]. Hot intraband luminescence (IBL) [52], [53], [54] occurs as a process competing to thermalization before the capture stage, therefore its decay time is determined by the thermalization stage duration. In some materials (e.g., BaF2), holes at the uppermost core levels have too low energy for Auger recombination, so they undergo self-trapping [55] and float to the top of the core band.…”
Section: Inorganic Scintillatorsmentioning
confidence: 99%