“…For typical GaAs/AlGaAs or InGaAs/GaAs structures, the frequencies of the interband transitions, ω 21 and ω 31 , lie in the near-infrared (optical) region, λ ≈ 0.8−1 µm, whereas the frequency of the intersubband transition, ω 32 , can be varied in a wide range -from mid-infrared to far-infrared, λ IR ≈ 5−100 µm, and to the THz region. In symmetrical QWs, all three transitions may be dipole allowed due to mixing of heavy and light holes [20,22]. An essential point of the schematic given is that the mean frequency of the pump pulse, ω, is close to the frequencies of the interband transitions, ω 21 and ω 31 , and the width of the pump pulse spectrum is large enough to span the difference between them, ω 32 .…”