New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

Makihara, A.; Ebihara, T.; Yokose, T.; Tsuchiya, Yoshishige; Amano, Yoshiharu; Shindou, H.; Imagawa, R.; Takahashi, Yuji; Kuboyama, S.

doi:10.1109/tns.2008.2007723

Cited by 13 publications

(7 citation statements)

References 7 publications

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“…1(a)] in the crossbar matrix of the logic tile. In the simulation, the switch was inserted to generate SET in the transistor [17]. For 100 to 1000 ps, the switch was turned on to generate a transient noise and then the output signal of the logic tile was monitored.…”

Section: B Pulsed Laser Irradiationmentioning

confidence: 99%

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Takeuchi

Sakamoto

Tada

et al. 2019

IEEE Trans. Nucl. Sci.

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Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal-oxide-semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation of an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a crossbar switch and memory in lookup tables (LUTs). ASs are not supposed to make any single-event transient (SET) noise when the ions hit. However, the CMOS layer shows SETs, and new approaches are proposed to solve the SET in CMOS, especially for AS-FPGA application. Index Terms-Atom switch (AS), heavy ions, pulsed laser, single-event effects (SEEs), single-event transient (SET).

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Section: B Pulsed Laser Irradiationmentioning

confidence: 99%

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Takeuchi

Sakamoto

Tada

et al. 2019

IEEE Trans. Nucl. Sci.

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“…This is because the connected current source is independent of its terminal voltage. This problem can be overcome by using switch‐and‐resistor technique [15, 16] to emulate the SET spike. Since there is a resistor that connects the output to ground, the output voltage does not go below ground rails.…”

Section: Circuit Simulation Of Setsmentioning

confidence: 99%

Widening and narrowing of time interval due to single‐event transients in 45 nm vernier‐type TDC

Pasupathy

Bindu

2017

IET Circuits, Devices & Syst

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Single-event transients (SETs) due to heavy-ion (HI) strikes adversely affect the electronic circuits in sub-100 nm regime in radiation environment. Time-to-digital converter (TDC) is an important electronic component in many fields such as space applications and is used for measuring time precisely as a digital value. In this study, the effect of SET due to radiation strike on 45 nm vernier-type TDC with a resolution of 7 ps is analysed using cadence spectre circuit simulator. When HI strikes the delay line of TDC close to the START/STOP pulse transition, it either widens or narrows the time interval to be measured, depending on whether it strikes the top/bottom voltage-controlled delay line (VCDL). Results show that the TDC is sensitive if the SET occurs during the transition of START/STOP pulse. Moreover, the change in the time interval occurs in a regular staircase pattern, if the VCDL is struck at all instants near the pulse transition. These errors lead to erroneous digital output and cause abrupt deviations in the staircase transfer characteristics of TDC. SETs in other constituent components of TDC such as D-flip-flop and priority encoder produces glitches which can be mitigated using existing guard gate technique.

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“…2. Substitution scheme examples: a) Bias dependent radiation subcircuit scheme [5] and b) Switch controlled radiation scheme [3].…”

Section: A Radiation Schemesmentioning

confidence: 99%

“…Highly dependent on the technology, the accurate results of these radiation schemes usually rely on a previous calibration. Figure 2 shows two examples of this kind of sources: Bias dependent radiation subcircuit scheme [5] and switch controlled radiation scheme [3]. Many other complex models can be included using this approach such as [2].…”

Section: A Radiation Schemesmentioning

confidence: 99%

A tool for the automatic analysis of single events effects on electronic circuits

García‐Redondo

López‐Vallejo

Royer

et al. 2014

2014 5th European Workshop on CMOS Variability (VARI)

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Abstract-Nowadays integrated circuit reliability is challenged by both variability and working conditions. Environmental radiation has become a major issue when ensuring the circuit correct behavior. The required radiation and later analysis performed to the circuit boards is both fund and time expensive. The lack of tools which support pre-manufacturing radiation hardness analysis hinders circuit designers tasks. This paper describes an extensively customizable simulation tool for the characterization of radiation effects on electronic systems. The proposed tool can produce an in depth analysis of a complete circuit in almost any kind of radiation environment in affordable computation times.

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New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

Cited by 13 publications

References 7 publications

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Widening and narrowing of time interval due to single‐event transients in 45 nm vernier‐type TDC

A tool for the automatic analysis of single events effects on electronic circuits

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