Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Abstract

Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal-oxide-semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation of an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a crossbar switch and memory in lookup tables (LUTs). ASs are not supposed to make any single-event transient (SET) noise when the ions hit. However, the CMOS layer shows SETs, and new approaches are proposed to solve the SET in CMOS, especially for AS-FPGA application. Index Terms-Atom switch (AS), heavy ions, pulsed laser, single-event effects (SEEs), single-event transient (SET).

Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system

“…high temperature, low temperature, space). [184][185][186][187][188][189] Figure 29(A) shows a schematic of the introduction of the atomic switch (nanobridge) in FPGA. 189) Atomic switch was used in a form of a complementary atomic switch consisting of two atomic switches connected in series with opposite directions as shown in Fig.…”

“…Single event effects of atom switches-based FPGA were investigated with both heavy ion and pulsed laser irradiation by Takeuchi, Sakamoto and co-workers. 187) A gapless-type atomic switch consisting of PSE, Cu and Ru electrodes were used in the FPGA. From the irradiation tests, excellent immunity to a state change up to 68.9 MeV/(mg cm −2 ) was confirmed in the atomic switch regardless of the resistivity states.…”