New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

Han, Kijeong; Kanale, Ajit; Baliga, B. Jayant; Ballard, Bahji; Morgan, Adam J.; Hopkins, Douglas C.

doi:10.1109/wipda.2018.8569178

Cited by 23 publications

(10 citation statements)

References 11 publications

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“…5. The parameters are set as follows: the parasitic inductance (L p ) is 200 nH, the DC drain-source voltage is 800 V [6,13,14] , and the gate resistance (R g ) is 2.5 Ω. The single pulse gate voltage of 15 V/0 V with varied pulse times is applied to control the SC times.…”

Section: The Sc Simulation Results and Analysis Of The Three Differen...mentioning

confidence: 99%

“…Many previous studies have focused on the SC failure mode and the comparison of SC performance between the trench structure and the planner structure. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Unfortunately, these results showed that a weaker SC robustness is found in the SiC trench MOSFET due to its higher power density. [5][6][7] Whereas, only a few studies on improving the SC reliability of the SiC trench MOSFETs are given.…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Unfortunately, these results showed that a weaker SC robustness is found in the SiC trench MOSFET due to its higher power density. [5][6][7] Whereas, only a few studies on improving the SC reliability of the SiC trench MOSFETs are given. Okada et al have demonstrated the improvement of SC reliability with the SiC SJ trench MOSFET structure, [18] but further structure optimization still needs to be carried out to enhance the SC reliability.…”

Section: Introductionmentioning

confidence: 99%

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Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Zuo¹,

Jiang²,

Tian³

et al. 2022

Chinese Phys. B

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In this article, a novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times (SCWT) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWT of the proposed structure increased by 60 % and 41.2 % in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga’s FOM (BV 2/R on) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga’s FOM.

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Section: The Sc Simulation Results and Analysis Of The Three Differen...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Zuo¹,

Jiang²,

Tian³

et al. 2022

Chinese Phys. B

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show abstract

“…The SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) has a smaller cell pitch and lower onresistance than the SiC planar MOSFET owing to the absence of the JFET region; however, an excessive electric field is crowded at the gate oxide in the blocking mode because the bottom of the trench is not covered with a p-base. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] This electric field concentration phenomenon causes destruction of the gate oxide, and long-term reliability is problematic owing to electrical defects of the gate oxide. Therefore, it is necessary to design a structure that suppresses the electric field at the gate oxide to ensure the safety and commercialization of SiC trench MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide

Park

Yoon

Kim

et al. 2023

Jpn. J. Appl. Phys.

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In this study, the effect of applying the tilted ion implantation process of a 1.2 kV SiC trench MOSFET on the electrical characteristics of the devices was investigated. P-shielding with tilted ion implantation protects both the sidewall and bottom of the trench from an electric field, enabling stable high-voltage operation, and the cell pitch can be reduced by using only one channel. Moreover, the tilted ion implantation process has the advantage of not requiring additional masks. For a comparative analysis, the tilt angle for ion implantation into the trench was changed in a TCAD simulation. A high breakdown voltage of 1617 V was achieved under an optimized tilt angle of 18.2°, and a low on-resistance of 2.9 mΩ-cm2 was obtained via structural optimization.

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“…However, this device with a higher inner critical electric field, a huge current density, a smaller chip area may encounter some reliability issues, such as poor short circuit (SC) ruggedness and a fragile gate structure [2 ]. To improve the SC reliability, several structure variations for the SiC power MOSFETs have been reported, including migration of the hotspot positions from gate to drift layer by using p‐type floating island [3 ], elimination of the body‐diode conduction by integrating the JBS diode [4 ], reduction of the saturation current and effective shielding the drain potential at large V D values by using retrograde doping profile in P‐well [5 ]. However, the SC reliability still needs more improvement.…”

Section: Introductionmentioning

confidence: 99%

Reliability enhanced SiC MOSFET with partially widened retrograde P‐well structure

et al. 2020

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In this Letter, a 1.2 kV SiC power MOSFET with a partially widened retrograde P-well (RP) structure and N-implanting region is proposed to enhance the device's reliability. Compared with the conventional SiC power MOSFET, the short circuit (SC) ability of the proposed structure can be improved effectively without sacrificing other performance. Simulation results reveal that a 40% reduction of the SC saturation current can be achieved, resulting in the SC withstand time increase from 7 to 10 μs at the DC-link voltage 800 V. Moreover, a better gate oxide reliability at 1.2 kV blocking condition also can be achieved. The peak electric field at the gate oxide interface is decreased by ∼48% owing to the shielding effect of the RP structure. In addition, the fabrication technology of the proposed structure is compatible with the standard planar SiC MOSFET manufacture process only with a few additional implanting steps. Therefore, this new MOSFET structure provides a simple and effective way to optimise the reliability of the planar SiC power MOSFET.

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New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

Cited by 23 publications

References 11 publications

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide

Reliability enhanced SiC MOSFET with partially widened retrograde P‐well structure

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