New single-crystalline phases in the system Ga2S3-In2S3

Krämer, V.; Nitsche, R.; Ottemann, J.

doi:10.1016/0022-0248(70)90052-7

Cited by 20 publications

(4 citation statements)

References 14 publications

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“…122 The 2D layered alloyed material can also be different based on the two constituents in the aspect of crystal structure phase. Based on reports from Kramer et al and Wang et al, 46,127 the mixing of monoclinic α-Ga 2 S 3 and cubic α-In 2 S 3 in a composition of Ga 2 In 4 S 9 leads to the formation of a hexagonal layered crystal (a = 7.64 and c = 74.0 Å) with a measured optical bandgap of 2.76 eV for a bilayer flake. The atomicresolution HAADF-STEM image shows a high degree of crystallinity in the lattice of the product and hexagonal symmetry.…”

Section: Bandgap Modulationmentioning

confidence: 98%

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang

Warner

2020

ACS Appl. Electron. Mater.

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Two-dimensional semiconductors with a layered structure are now among the most extensively studied materials. The unique structural form of 2D layered semiconductors provides several benefits over other existing materials as key components in next-generation nanodevices such as transistors, photodetectors, solar cells, light emitting devices, molecular sensors, and optical imaging sensors. However, most of these studies concentrate on narrow bandgap semiconductors (bandgap E g < 2 eV) that emit/absorb in the red and infrared regions. Recently, more research has focused on wide bandgap 2D layered semiconductors, as they have demonstrated great potential in applications in electronics and optoelectronics for the green and blue wavelength regions. This Review summarizes the 2D layered materials that have been experimentally proven as wide bandgap semiconductors, including GaS, GaSe, InSe

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Section: Bandgap Modulationmentioning

confidence: 98%

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang

Warner

2020

ACS Appl. Electron. Mater.

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“…Specifically, as a kind of homobimetallic sulfide, the ternary Ga 2 In 4 S 9 is believed to possess novel electronic and optoelectronic properties compared the 2D counterparts . Up to now, only work on bulk Ga 2 In 4 S 9 with a thickness of a few micrometers has been reported, in which bulk Ga 2 In 4 S 9 is obtained by chemical vapor transport . The bulk structure actually hinders their practical application in the field of micro–nano electronic and optoelectronic devices .…”

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confidence: 99%

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

et al. 2018

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Since the first isolation of graphene in 2004, [1] 2D materials have gained growing attention because of their unique physical and physicochemical properties, [2,3] originating from their reduced dimensions, [4] strong electron confinement, [5] abundant active sites, [6] and edge polarization. [7] These features, in turn, endow 2D materials with exciting prospects for promising applications in the fields of energy storage/conversion and optoelectronics. In the early stages, the research on 2D materials was primarily focused on single or binary elemental materials. [8][9][10][11][12][13] Recently, however, 2D ternary materials have attracted increasing attention due to their multiple degrees of freedom. [14][15][16][17][18][19][20] The added freedom of stoichiometry variation in 2D ternary materials can be used to tune their physical properties and therefore may lead to promising applications. [21,22] Ternary Ga 2 In 4 S 9 is a layered material with weak van der Waals interaction and reveals n-type semiconducting behavior. [23,24] The multinary compound that reveals an unprecendented robust electronic character as well as a wide bandgap close to 2.7 eV with pronounced photosensitivity and temperature-dependent optical absorption edge opens a new paradigm for UV detection. [23] This is particularly desirable for military and civilian fields. [25] Specifically, as a kind of homobimetallic sulfide, the ternary Ga 2 In 4 S 9 is believed to possess novel electronic and optoelectronic properties compared the 2D counterparts. [26] Up to now, only work on bulk Ga 2 In 4 S 9 with a thickness of a few micrometers has been reported, in which bulk Ga 2 In 4 S 9 is obtained by chemical vapor transport. [23,27] The bulk structure actually hinders their practical application in the field of micro-nano electronic and optoelectronic devices. [28] Unfortunately, there are no reports on the synthesis of 2D ternary Ga 2 In 4 S 9 flakes with controllable stoichiometry, which may be attributed to the difficulty in selecting optimal homobimetallic precursors. Recently, the creation of atomically thin metal oxides or selenides by adopting eutectic gallium melts with tunable metal elements offers a promising approach to grow ternary semiconductors. [29][30][31][32] In this letter, we report the growth of ultrathin Ga 2 In 4 S 9 flakes by employing liquid gallium/indium (Ga/In) alloy as the reaction environment. Because of the reduced reaction temperature by using the liquid Ga/In alloy, [31] the key point of our growth 2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga 2 In 4 S 9 flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing appl...

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“…To summarize, the film at the end of the first stage is a stack of three layers and contains crystallites which structure corresponds to either tetragonal b-In 2 S 3 -like or hexagonal/rhombohedral InGaS 3 -like. The coexistence of these phases can be explained by the low solubility range of gallium sulfide in indium sulfide; Krämer et al [15] reported single phased In 2-2x Ga 2x S 3 for 0 < x < 0.05, while for higher x they observed the coexistence of In 2 S 3 and In x Ga y S z hexagonal/rhombohedral phases. By taking into account the qualitative GDOES profiles shown in Figure 2b, it is probable the InGaS 3 -like is located at the rear, the b-In…”

Section: Solar Cell Preparation and Characterizationmentioning

confidence: 99%

Investigation of co-evaporated polycrystalline Cu(In,Ga)S₂thin film yielding 16.0 % efficiency solar cell

et al. 2022

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The interest for pure sulfide Cu(In,Ga)S2 chalcopyrite thin films is increasing again because their optical properties make them relevant candidates to be applied as top cell absorbers in tandem structures. Nonetheless, their use as so is still hindered by the level of single-junction cells performance achieved so far, which are far below those demonstrated by selenide absorbers. Amongst the reasons at the origin of the limited efficiency of Cu(In,Ga)S2-based solar devices, one can mention the poor tolerance of S-chalcopyrite to Cu deficiency. In fact, Cu-poor Cu(In,Ga)S2 films contain CuIn5S8 thiospinel secondary phase which is harmful for device performance. In the present work, we investigate Cu(In,Ga)S2 thin films grown by a modified three-stage process making use of graded indium and gallium fluxes during the first stage. The resulting absorbers are single phase and made of large grains extended throughout the entire film thickness. We propose that such a morphology is a proof of the recrystallization of the entire film during the synthesis. Devices prepared from those films and buffered with bath deposited CdS demonstrate outstanding efficiency of 16.0%. Replacing CdS by Zn(O,S) buffer layer leads to increased open circuit voltage and short circuit current; however, performance become limited by lowered fill factor.

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New single-crystalline phases in the system Ga2S3-In2S3

Cited by 20 publications

References 14 publications

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

Investigation of co-evaporated polycrystalline Cu(In,Ga)S₂thin film yielding 16.0 % efficiency solar cell

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New single-crystalline phases in the system Ga2S3-In2S3

Cited by 20 publications

References 14 publications

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga2In4S9 toward High‐Performance UV Photodetection

Investigation of co-evaporated polycrystalline Cu(In,Ga)S2thin film yielding 16.0 % efficiency solar cell

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Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

Investigation of co-evaporated polycrystalline Cu(In,Ga)S₂thin film yielding 16.0 % efficiency solar cell