2007
DOI: 10.1143/jjap.46.2054
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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract: Evaluating the statistical variation of the metal-oxide-semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed the test circuit for understanding the statistical and local variation of MOSFET in very short time. It is demonstrated that a large number of MOSFETs, about … Show more

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Cited by 31 publications
(23 citation statements)
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“…The wide spread in amplitudes has motivated the development of measurement techniques enabling the fast assessment of the V T change induced by RTN in a large array of similar transistors, using a dedicated test chip lay out (25)(26)(27)(28)). An example of such a test circuit and measurement scheme is represented in Fig.…”
Section: Characterization and Physics Of Rtnmentioning
confidence: 99%
“…The wide spread in amplitudes has motivated the development of measurement techniques enabling the fast assessment of the V T change induced by RTN in a large array of similar transistors, using a dedicated test chip lay out (25)(26)(27)(28)). An example of such a test circuit and measurement scheme is represented in Fig.…”
Section: Characterization and Physics Of Rtnmentioning
confidence: 99%
“…We can measure electrical characteristics in a very large number of MOSFETs during very short time [6] [7]. Fig.1 (a) shows cumulative probability distribution of ∆V GS , the difference of the gate-source voltage, of the continuous 300-frame outputs of each MOSFET and figures (b) and (c) show V GS as a function of time which indicate (A) and (B), respectively.…”
Section: Measurement Methodsmentioning
confidence: 99%
“…The schematic block diagram of TEG is shown in Fig. 1(a) [7,8]. In this TEG, applied bias voltages to the measured MOSFETs (V G , V D ) are forced simultaneously.…”
Section: Methodsmentioning
confidence: 99%