New submicron non-volatile memory modules for 16/32-bit devices

Abstract

Development of new submicron nonvolatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable Flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the baseline logic process based on 0 . 6 5 p double metal CMOS technology. INTRODUCTIONIntegration of non-volatile memories has significantly enhanced performance, versatility and applications for microcontrollers. A s technology is further scaled down and the amount of integration capability further increased, larger onchip non-volatile memories are not only required to meet many system applications but also effective for utilizing the added technology capabilities. In this paper, the development of two new submicron nonvolatile memory modules, an EEPROM with unique programmable redundancy and a block erasable Flash EEPROM, for integration into 16-bit and 32-bit devices is reported.