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o a t i n g -g a t e memory device and a s e l e c t t r a n s i s t o r . E l e c t r i c a l programming and erasure o f t h e f l o a t i n g -g a t e t r a n s i s t o r i s a c h i e u d b y f i e l d e m i s s i o n o f e l e c t r o n s t h r o u g h a t h i n o x i d e .The memory t r a n s i s t o r e x h i b i t s an endurance o f g r e a t e r t h a n l o 5 p r o g r a m -e r a s e c y c l e s w i t h e x t r a p o l a t e d d a t a r e t e

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This paper describes a sub-half micron embedded flash EEPROM developed for high speed microcontroller applications. A 32-bit RISC microcontroller with 448K bytes (3.67M bits) of embedded flash EEPROM will be presented. High density Flash memory is achieved by utilizing a single transistor NOR type cell that employs Fowler-Nordheim electron tunneling for both program and erase. The high density flash EEPROM is integrated into a high performance logic process with dual gate oxides for high performance and high voltage transistors. The array program time is greatly reduced by employing a highly parallel program operation, and data throughput is greatly enhanced by a page mode operation. Operating at 40Mhz, the embedded flash memory has an on-chip off-page access time of under 38nS and onpage access time of under 13nS. IntroductionCombining high density, low cost and electrically programmable and erasable capabilities, flash EEPROM has widely been accepted as the non-volatile memory of choice for program and data storage. By being embedded on-chip, the flash EEPROM can offer enhanced system performance and