ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
DOI: 10.1109/ispsd.2003.1225300
|View full text |Cite
|
Sign up to set email alerts
|

New trench MOSFET technology for DC-DC converter applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 14 publications
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…Trench vertical double-diffused power MOSFETs (VDMOS) are widely used in power management systems as ideal power switches for space radiation environments [ 1 , 2 , 3 ]. These devices will be exposed to energetic neutrons, protons, and heavy ions when used in space.…”
Section: Introductionmentioning
confidence: 99%
“…Trench vertical double-diffused power MOSFETs (VDMOS) are widely used in power management systems as ideal power switches for space radiation environments [ 1 , 2 , 3 ]. These devices will be exposed to energetic neutrons, protons, and heavy ions when used in space.…”
Section: Introductionmentioning
confidence: 99%
“…In order to achieve the best trade-off between BV DSS and R DS(on)sp , other alternative cost-effective trench structures [130] employ a relatively thick gate oxide at the bottom of the trench and reduced drift region, thereby allowing the reduction of both gate-drain charge Q GD and R DSon for the same BV DSS capability. Some of these trench structures have proven to produce R DS(on)sp values around 12mΩ•mm², which compare competitively with the more complex RESURF devices [133], [134].…”
Section: Semiconductor Power Devicesmentioning
confidence: 99%