New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures

Device Physics and Electrical Performance of Bulk Silicon Mosfets

“…In Fig. 30, the dependence of the lifetime on the gate bias and channellength is studied at liquid nitrogen temperature [79]. It is clear that the worst case is obtained in the maximum substrate current condition for long devices and in the maximum gate current condition when MOSFETs are scaled down.…”

“…28 for various gate lengths versus stress time [79]. When the channel length is shrunk, the worst-case degradation shifts from the maximum substrate current (long devices) to the maximum gate current condition (shorter devices).…”

“…The impact of both the channellength and temperature is exemplified in Fig. 31 [79]. For long devices, the worst case corresponds to the maximum substrate current except for very low temperatures.…”