New voltage ramp dielectric breakdown methodology based on square root E model for Cu/low-k interconnect reliability

Electrical Breakdown in Advanced Interconnect Dielectrics

“…The above equation is derived by assuming that the E-model [319,323,324] represents the intrinsic LK/ULK TDDB; however, versions using other lifetime models, such as the √E-model, have also been similarly constructed [254,325,326] so that the effective-time-at-field expression is modified from Equation (11.2). For an IMD capacitor, s can be interpreted to be the minimum line-to-line spacing.…”

Field Dependence of Porous Low-$k$ Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions

“…Testing was carried out at 125 • C using either constant voltage [time-dependent dielectric breakdown (TDDB)] or ramped voltage [voltage ramp dielectric breakdown (VRDB)] techniques. Data from either techniques are readily transformed into the other with knowledge of the field acceleration factors of breakdown [16], [17]. Failure was defined as an increase of a factor of ten in the leakage current for the TDDB and an increase of a factor of ten in the leakage current for the VRDB.…”