New world record Cu(In, Ga)(Se, S)&lt;inf&gt;2&lt;/inf&gt; thin film solar cell efficiency beyond 22%

Kamada, Rui; Yagioka, T.; Adachi, Shunsuke; Handa, Atsushi; Tai, Kong Fai; Kato, Takuya; Sugimoto, H.

doi:10.1109/pvsc.2016.7749822

Cited by 160 publications

(95 citation statements)

References 6 publications

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“…[1] A strong boost in efficiency was enabled due to the addition of a KF postdeposition treatment (PDT). [2] Recently, the addition of Rb and Cs has proven to be beneficial for device performance as well, and a 22.6% efficient CIGS device has been demonstrated using a RbF PDT.…”

Section: Introductionmentioning

confidence: 99%

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

Weiss

Nishiwaki

Bissig

et al. 2017

Adv Materials Inter

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Among the thin‐film solar cell technologies, Cu(In,Ga)Se2‐based solar cells demonstrate the highest efficiencies, where the recent boost in efficiency is triggered by a KF postdeposition treatment (PDT). In this contribution, Cu(In,Ga)Se2‐based solar cells are fabricated using RbF PDTs after absorber layer growth with varying substrate and RbF source temperature. The electronic charge transport properties of the solar cell devices are investigated using temperature‐dependent current–voltage analysis and admittance spectroscopy. To investigate the observed transport barriers, a novel concept based on the differential series resistance is proposed. This approach is supported by simulations of current–voltage curves, which reproduce qualitatively experimental data. Experimentally, two parallel conduction paths are found, which act as barriers with different activation energies and impede the charge carrier transport. Both the thickness and height of these barriers increase with an increasing amount of incorporated Rb and can lead to losses in the fill factor and power conversion efficiency at room temperature. Etching in HCl prior to CdS buffer layer deposition reduces the barrier width and can recover these losses.

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Section: Introductionmentioning

confidence: 99%

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

Weiss

Nishiwaki

Bissig

et al. 2017

Adv Materials Inter

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“…Friedlmeier et al reported an efficiency of 21% [7] using Zn(O,S) buffer as a replacement for the conventional CdS/ CIGSe devices. Similarly, a record efficiency of 22.3% [8] was achieved for Cd-free device by SoloPower, utilizing (Zn,Mg)O/Zn(O,S,OH) as the window/buffer layer. Impressive efficiencies (~ 15.7 ± 0.5%) are also reported for CIGSe modules of 9703 cm 2 aperture area [9].…”

Section: Introductionmentioning

confidence: 90%

A short review on the advancements in electroplating of CuInGaSe2 thin films

Chandran

Panda

Mallik

2018

Mater Renew Sustain Energy

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Thin-film solar cell devices based on copper indium gallium diselenide (CIGSe) chalcogenide materials fabricated by vacuum-based deposition techniques have already achieved lab scale efficiency beyond 21%. For industrial-scale applications, non-vacuum deposition technique such as electrodeposition and screen printing is considered to be suitable approaches for reducing the device fabrication cost. Moreover, electrodeposition has the potential to prepare large area thin films as it requires cheap raw material sources and equipment capital. Hence, it is imperative to understand the current status and advancements in the electroplating techniques of the CIGSe thin films. This article reviews on the experimental advances in electroplating of ternary CuInSe 2 and quaternary CIGSe. Various approaches in electrodeposition, influential experimental parameters, and the deposition mechanisms which are related to the final cell efficiency are discussed in detail.

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“…11) However, the study of CTGS compound is still immature and reports concerning to this compound are relatively few compared to the well-developed absorber materials such as Si, GaAs, Cu(In,Ga)Se 2 , CdTe, and Cu 2 ZnSn(S,Se) 4 . [1][2][3][4][5][6][7][8][9][10][12][13][14][15][16][17] Besides, formation of different crystal phases as well as unintended secondary phases is one of the major problems for this material system due to its multinary elemental composition. [18][19][20][21][22][23][24][25][26][27][28] Hence, it is important to explore the material properties relating to its impurity phases as well as fabrication techniques of CTGS multinary compound by various theoretical and experimental approaches in order to improve its characteristics.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films

Okamura

Htay

Yamaguchi

et al. 2018

Jpn. J. Appl. Phys.

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Analysis on the temperature-dependent Raman spectra measured between 27–450 °C range in relation to various Ge compositional ratios of Cu2Sn1−xGexS3 thin-film alloys, which were prepared by closed-tube sulfurization technique, was carried out in detail. By XRD and Raman analyses, linear transformation of the lattice parameters for Cu2Sn1−xGexS3 thin-film alloys with respect to the Ge composition was confirmed to be obeying the Vegard’s law. By AC Hall effect measurement, reducing of carrier mobility was observed in the Cu2Sn1−xGexS3 thin-film alloys with higher Ge content. By the temperature dependent Raman spectroscopy analysis, it is observed that the red shifting of Raman vibration energy due to the thermal expansion is resembled to that of the temperature dependency of energy bandgap of semiconductors. Anisotropic thermal dilatation behavior was observed in the Cu2Sn1−xGexS3 thin-film alloy independent of its Ge composition.

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New world record Cu(In, Ga)(Se, S)<inf>2</inf> thin film solar cell efficiency beyond 22%

Cited by 160 publications

References 6 publications

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

A short review on the advancements in electroplating of CuInGaSe2 thin films

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films

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New world record Cu(In, Ga)(Se, S)<inf>2</inf> thin film solar cell efficiency beyond 22%

Cited by 160 publications

References 6 publications

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se2‐Based Solar Cells

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se2‐Based Solar Cells

A short review on the advancements in electroplating of CuInGaSe2 thin films

Temperature-dependent Raman spectroscopy of Cu2Sn1− x Ge x S3 thin films

Contact Info

Product

Resources

About

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

Injection Current Barrier Formation for RbF Postdeposition‐Treated Cu(In,Ga)Se₂‐Based Solar Cells

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films