Newly developed positive tone resists for Posi/Posi double patterning process

Abstract

Double patterning with 193nm immersion lithography is generally recognized as a candidate for 32nm hp node and possibly beyond with recent progress. LLE (Litho-Litho-Etch) could be good candidate for double patterning method because of its simplicity but the good solution hasn't been proposed yet.In last year, freezing free Posi/Nega process was introduced as candidate for LLE process. But that had an issue that the resolution of negative tone resist was little bit poor for 1L/3S pattern compared with positive tone. Thus it's better to choose positive tone as 2 nd resist for this reason. And then Posi/Posi process without any freezing material has been investigated and successfully established to image double patterning.Posi/Posi process without any freezing material has successfully achieved to image below 32nm hp. Furthermore contact hole imaging was succeeded by using cross-line method and image reverse method.We present the productivity study of freezing free Posi/Posi process on Cross-lined contact hole, critical resolution for pitch splitting and reverse imaging for contact hole.

Simulation and Experimental Study on Multilayer Double-Patterning Processes

“…Litho-etch litho-etch (LELE) is the most mature process, but it is also cost-prohibitive and complex. Alternative processes that eliminate one etch process have been developed, leading to such schemes as litho-freeze-litho-etch (LFLE) (2,3) and litho-process-lithoetch (LPLE) (4,5). Previously, we have demonstrated the ability to generate 32-nm dense line and space features (L/S) using the LFLE and LPLE processes on various BARCs, such as ARC ® 29SR, ARC ® 86, ARC ® 133, and ARC ® 160 coatings (6).…”