Double patterning technology based on existing ArF immersion lithography is considered as the most viable option for complementary metal oxide semiconductor (CMOS) node of 32 nm and below. Most of double patterning approaches previously described requires intermediate processing step such as hard mask etching, spacer material deposition, and resist pattern freezing. The requirement of these additional steps is now leading way to requests for throughput reduction and low cost for production for double patterning technology applications. In this paper, litho-litho-etch (LLE) double patterning without any intermediate processing steps is investigated to achieve narrow pitch resist imaging. The LLE options examined in this work are combinations of positive tone-negative tone and positive tonepositive tone photoresist double patterning process. These are the alternative processes in pattern freezing process free LLE double patterning. The goals of this work are to determine witch of these approaches is the most viable for future application and to confirm the patterning potential for 32 nm and below half pitch resist imaging.

No abstract

Double patterning with 193nm immersion lithography is generally recognized as a candidate for 32nm hp node and possibly beyond with recent progress. LLE (Litho-Litho-Etch) could be good candidate for double patterning method because of its simplicity but the good solution hasn't been proposed yet.In last year, freezing free Posi/Nega process was introduced as candidate for LLE process. But that had an issue that the resolution of negative tone resist was little bit poor for 1L/3S pattern compared with positive tone. Thus it's better to choose positive tone as 2 nd resist for this reason. And then Posi/Posi process without any freezing material has been investigated and successfully established to image double patterning.Posi/Posi process without any freezing material has successfully achieved to image below 32nm hp. Furthermore contact hole imaging was succeeded by using cross-line method and image reverse method.We present the productivity study of freezing free Posi/Posi process on Cross-lined contact hole, critical resolution for pitch splitting and reverse imaging for contact hole.

Double patterning based on existing ArF immersion lithography is considered the most viable option for 32nm and below CMOS node. Most of double patterning approaches previously described require intermediate process steps like as hard mask etching, spacer material deposition, and resist freezing. These additional steps can significantly add to the cost of production applied the double patterning. In this paper, pattern freezing free litho-litho-etch double patterning process is investigated to achieve a narrow pitch imaging without the intermediate processing steps. Pattern freezing free litho-litho-etch double patterning utilizing positive-positive resist combination demonstrated composite pattern generation.

No abstract