Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Ryu, Yungryel; Lee, Tae-Seok; Lubguban, Jorge; White, H. W.; Kim, Bongjin; Park, Yoon Soo; Youn, C. J.

doi:10.1063/1.2210452

Cited by 420 publications

(209 citation statements)

References 6 publications

Supporting

Mentioning

195

Contrasting

Unclassified

Order By: Relevance

“…12 A direct band gap of 3.4 eV and a large exciton binding energy (60 meV) at room temperature make ZnO a prominent candidate in optical applications, such as an ultraviolet detector, 13Ϫ16 optical pumped laser, 17,18 and light emitting diodes. 19 Recently, the photoconducting response at different degrees of straining of a ZnO nanowire has been studied using in situ transmission electron microscopy. 20 Although a lot of progress has been made in each research field as stated above, very limited research has been conducted on the localized and quantitatively controlled coupling of the piezoelectric effect and photoexcitation on a ZnO nanowire nanodevice.…”

mentioning

confidence: 99%

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

et al. 2010

View full text Add to dashboard Cite

S emiconductor nanowires are the fundamental materials for fabricating a wide range of nanodevices. 1Ϫ5 In the oxide family, ZnO nanowires and nanobelts have been widely studied as a key 1D oxide nanomaterial for numerous applications. Due to the unique piezoelectric and semiconducting coupled properties, a range of novel nanodevices of ZnO have been developed, such as nanogenerators, 6Ϫ9 piezoelectric field effect transistors, 10 piezoelectric diode, 11 and strain sensors. 12 A direct band gap of 3.4 eV and a large exciton binding energy (60 meV) at room temperature make ZnO a prominent candidate in optical applications, such as an ultraviolet detector, 13Ϫ16 optical pumped laser, 17,18 and light emitting diodes. 19 Recently, the photoconducting response at different degrees of straining of a ZnO nanowire has been studied using in situ transmission electron microscopy. 20 Although a lot of progress has been made in each research field as stated above, very limited research has been conducted on the localized and quantitatively controlled coupling of the piezoelectric effect and photoexcitation on a ZnO nanowire nanodevice.In this paper, by introducing a controllable stepping strain and using a focused laser beam, we have investigated the localized coupling between the piezoelectric effect and photoexcitation of ZnO microwire devices that exhibit various controlled electrical transport characteristics. By using microwire devices with SchottkyϪOhmic, OhmicϪOhmic, and SchottkyϪSchottky contacts, we have demonstrated the finetuning of contact characteristics, such as from Schottky to Ohmic or from Ohmic to Schottky, by varying the individual contributions made by piezoelectricity and photoexcitation at local contacts. On the basis of this concept, a design of electric transport properties is demonstrated. This study reveals a new principle for controlling the coupling among mechanical, electrical, and optical properties, which can be the basis for fabricating piezo-photonic-electronic nanodevices, which is referred to as piezophototronics. RESULTS AND DISCUSSIONOur device was fabricated using a single micro/nanowire of ZnO (see the Experimental Methods for details). First, we investigated the photoresponse of a microwire device with photoexcitation at different locations along the ZnO microwire. Figure 1a is a superimposed optical image taken from a ZnO microwire device with the laser spot focused at different positions, as schematically shown on the right-hand side. Points P1, P2, and P3, respectively, represent the positions at the left-hand metalϪZnO contact, central channel region, and right-hand metalϪZnO contact.

show abstract

mentioning

confidence: 99%

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

et al. 2010

View full text Add to dashboard Cite

show abstract

“…Стоит отметить, что в спектрах ФЛ тонких пленок ZnO и Cd 0. 3 тепловых колебаний кристаллической решетки и, как следствие, ослаблением фонон-электронного взаимодействия. В результате внутренняя квантовая эффективность исследуемых образцов увеличивается.…”

Section: результаты эксперимента и их обсуждениеunclassified

“…В последнее время большое внимание уделяется широкозонным полупроводникам A II B VI , так как опто-электронные устройства на их основе способны рабо-тать в видимом и ультрафиолетовом диапазонах длин волн [1][2][3][4]. Большой интерес представляет прямозон-ный полупроводник оксид цинка благодаря широкой запрещенной зоне, E g = 3.37 эВ, и рекордной среди полупроводников энергии связи экситонов 60 мэВ, что обеспечивает эффективную экситонную эмиссию при бо-лее высоких температурах по сравнению с оптическими полупроводниками A III B V [5].…”

Section: Introductionunclassified

Люминесцентные свойства тонких пленок Cd-=SUB=-x-=/SUB=-Zn-=SUB=-1-x-=/SUB=-O

Lotin¹,

Novodvorskii²,

Parshina³

et al. 2018

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Thin Cd_ x Zn_1 – x O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd_ x Zn_1 – x O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd_0.15Zn_0.85O and Cd_0.3Zn_0.7O films. An unsteady ( S -like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd_ x Zn_1 – x O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.

show abstract

“…이 같은 ZnO 특성을 이용하여 현 재, transparent conductors 1) , including quantum cascade lasers 2) , ultraviolet light-emitting diodes 3) , UV detectors 4) , gas sensors 5) , 그리고, thin film solar cells 6) 등의 다양한 디 바이스에 적용 되고 있다.…”

Section: 서 론unclassified

Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis

Jang¹,

Oh²,

2014

Journal of the Microelectronics and Packaging Society

View full text Add to dashboard Cite

In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at 90 o C. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

show abstract

Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Cited by 420 publications

References 6 publications

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

Designing the Electric Transport Characteristics of ZnO Micro/Nanowire Devices by Coupling Piezoelectric and Photoexcitation Effects

Люминесцентные свойства тонких пленок Cd-=SUB=-x-=/SUB=-Zn-=SUB=-1-x-=/SUB=-O

Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis

Contact Info

Product

Resources

About