Ni behaviors in polycrystalline silicon with disk-shaped grains

Kim, Kyung Ho; Jang, Jin

doi:10.1016/j.jcrysgro.2009.01.083

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2012

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“…In a previous study, nickel ranging between 10 12 and 10 14 cm À2 on a-Si for the crystallization gave the disk-shaped grains. 22) Here, the SiN x layer is a stable insulating material and thus does not react with nickel. After the deposition of Ni, the films were thermally annealed in N 2 ambient atmosphere.…”

Section: Experimental Methodsmentioning

confidence: 99%

High Mobility P-Channel Thin-Film Transistors with Ultralarge-Grain Polycrystalline Silicon Formed Using Nickel-Induced Crystallization

Jang

Lee

Choi

et al. 2012

Jpn. J. Appl. Phys.

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We realized both continuous wave (CW) and Q-switched mode-locking in a diode-pumped Nd:YVO 4 laser by using a single crystal GaAs wafer as the saturable absorber as well as an output coupler. The GaAs wafer was coated to have a continuously variable reflectivity and the laser intensity within the GaAs saturable absorber can be changed by simply translating the GaAs wafer. CW mode-locked pulses of 1.5 W average power and 31 ps duration were generated at 154 MHz repetition rate. For Q-switched mode-locking, the repetition rate and pulse duration of the Q-switched pulses were 133-300 kHz and 100-350 ns, respectively.

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Section: Experimental Methodsmentioning

confidence: 99%