Niche switch technologies

Lucyszyn, Stepan; Pranonsatit, S.; Choi, Jah Yeon; Holmes, Andrew S.

doi:10.1017/cbo9780511781995.005

Cited by 9 publications

(12 citation statements)

References 30 publications

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“…Three gold dimples (depth of 1 µm) were used in the switch for contact, one was placed at the beam tip and the other two were placed parallel to it. This multi-contact beam introduces a few salient features in the design like (a) a multi-contact type DC-contact switches are less prone to dielectric charging even after multiple cycles of operations, (b) multi-contact surface increases overall contact area and reduces the contact resistance (R c ) and (c) single contact failure sometimes completely damages the overall switching performance during the reliability operation due to contact point degradation [1].…”

Section: Design Analysis and Measurements Of The Spst Switchmentioning

confidence: 99%

“…Multi band phase shifter is one of the strongest and state-ofthe-art candidates for wideband multi-frequency systems. This phase shifter can decrease the system complexity significantly and replace multiple phase shifters [1]. Different types of phase shifters are reported using ferroelectric, photonic and liquid-crystal technologies [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Radio frequency (RF) micro-electro-mechanical system (MEMS) technology is one of the prime choices for phase shifter design due to its high linearity, low loss and excellent phase accuracy [5]. In addition, RF MEMS based phase shifters are suitable components for system on chip (SoC) in modern RF systems that demand reconfigurable operation at different frequencies over different frequency bands [1].…”

Section: Introductionmentioning

confidence: 99%

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Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

Dey

Koul

Poddar

et al. 2017

J. Micromech. Microeng.

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A few corrections have been made in this manuscript; as follows:1. The measurement results in figure 3(c) were wrong; the correct version is given below.In reference to figure 3(c), we also correct the statement made in page 3, in the first column, third paragraph, and first line as given below:Measured V p and release (V r ) voltages are in the range of 84-109 V and it was depicted from the capacitance variations between the control electrode and the beam (figure 3(c)).We also correct the second sentence in page 3, first column, and third paragraph as given:Measured ON-time of 12.6-9.5 µs with OFF-time of 6.8 µs was obtained at 108-120 V bias.2. The measurement results for figure 4(a) were wrong; the correct version is given above.In reference to figure 4(a), we also correct the statement made in page 3, first column, third paragraph, and third line as given below:

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Section: Design Analysis and Measurements Of The Spst Switchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

Dey

Koul

Poddar

et al. 2017

J. Micromech. Microeng.

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“…The DMTL type frequency reconfigurable phase shifter, using triple-stub topology, recently reported by Unlu et al in 2013 [24], can operate at any given frequency within a targeted band of 15-40 GHz with adjustable phase steps. However, this phase shifter [24] can work in a wide band (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26), but with different resolution. However, there are no reconfigurable digital phase shifters reported so far which can operate with constant resolution at each band over a wide band of spectra.…”

Section: Introductionmentioning

confidence: 99%

10–25 GHz frequency reconfigurable MEMS 5-bit phase shifter using push–pull actuator based toggle mechanism

Dey

Koul

2015

J. Micromech. Microeng.

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This paper presents a frequency tunable 5-bit true-time-delay digital phase shifter using radio frequency microelectromechanical system (RF MEMS) technology. The phase shifter is based on the distributed MEMS transmission line (DMTL) concept utilizing a MEMS varactor. The main source of frequency tuning in this work is a bridge actuation mechanism followed by capacitance variation. Two stages of actuation mechanisms (push and pull) are used to achieve a 2:1 tuning ratio. Accurate control of the actuation voltage between the pull to push stages contributes differential phase shift over the band of interest. The functional behavior of the push–pull actuation over the phase shifter application is theoretically established, experimentally investigated and validated with simulation. The phase shifter is fabricated monolithically using a gold based surface micromachining process on an alumina substrate. The individual primary phase-bits (11.25°/22.5°/45°/90°/180°) that are the fundamental building blocks of the complete 5-bit phase shifter are designed, fabricated and experimentally characterized from 10–25 GHz for specific applications. Finally, the complete 5-bit phase shifter demonstrates an average phase error of 4.32°, 2.8°, 1° and 1.58°, an average insertion loss of 3.76, 4.1, 4.2 and 4.84 dB and an average return loss of 11.7, 12, 14 and 11.8 dB at 10, 12, 17.2 and 25 GHz, respectively. To the best of the authors’ knowledge, this is the first reported band tunable stand alone 5-bit phase shifter in the literature which can work over the large spectrum for different applications. The total area of the 5-bit phase shifter is 15.6 mm2. Furthermore, the cold-switched reliability of the unit cell and the complete 5-bit MEMS phase shifter are extensively investigated and presented.

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“…The latter two advantages are of particular interest for RF MEMS applications. A further advantage for MEMS relays is that they have very high values of off-resistance, which is important for low power applications, especially where power consumption is critical [9]. There two types of MEMS switches: capacitive coupling and metal contacting.…”

Section: Introductionmentioning

confidence: 99%

Development of a MEMS test platform for investigating the use of multi-walled CNT composites electric contacts

Lewis

Chianrabutra

Jiang

et al. 2013

2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013)

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The use of gold-coated multi-walled carbon nanotube (Au/MWCNT) composites have been shown to extend the life of electrical contacts, in previous work [1][2][3]. Due to the long lifetimes (which are of the order of 10 6 up to 10 8 cycles [4,5]) the lifetime testing tends to be highly time consuming. In this work we discuss the design and development of an electrostatically actuated MEMS cantilever beam which enables testing at higher frequencies than our previous experimental rig. Following calculations using fundamental cantilever beam equations, a computational model of the designed beam was developed to accurately predict the characteristics of the beam, including the resonant frequency, pull-in voltage and contact force. Where possible the values from the model have been compared with the fabricated MEMS cantilever beam. A MEMS-based electrostatically actuated cantilever beam has been fabricated and incorporated with Au/MWCNT composite surfaces to form a MEMS switch test platform. Initial results show the improved performance over a PZT based test platform.

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Niche switch technologies

Cited by 9 publications

References 30 publications

Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

10–25 GHz frequency reconfigurable MEMS 5-bit phase shifter using push–pull actuator based toggle mechanism

Development of a MEMS test platform for investigating the use of multi-walled CNT composites electric contacts

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