Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Tan, Eu Jin; Pey, K. L.; Singh, Nandan; Lo, G. Q.; Chi, Dongzhi; Chin, Y. K.; Tang, Lei; Lee, Pooi See; Ho, Ching Yuan

doi:10.1109/led.2008.2000876

Cited by 21 publications

(14 citation statements)

References 16 publications

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“…Using this technique, we demonstrate SB-FETs with ultrashort channel lengths down to 17 nm on VLS grown Si NWs. Compared with the conventional MOSFET, a SBFET has naturally abrupt junctions and is not limited by lateral doping profiles, which are determined by the doping/activation techniques , and become increasingly difficult for ultrashort channel devices. Our investigation also includes the silicidation reaction fundamentals (phase formation and growth kinetics), which is important to achieve a fine control over transistor channel lengths previously not achieved with VLS NW FETs.…”

Section: Materials Considerations In Nanochannel Silicidationmentioning

confidence: 99%

Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts

et al. 2012

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We demonstrate the shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) by a controlled reaction with Ni leads on an in situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 °C. NiSi(2) is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (μA/μm) and a maximum transconductance of 430 (μS/μm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of 17 nm to 3.6 μm. Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using conventional field-effect transconductance measurements.

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Section: Materials Considerations In Nanochannel Silicidationmentioning

confidence: 99%

Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts

et al. 2012

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“…Exploitation of stable Schottky source/drain contacts in nanostructure based FETs 31 32 (SB-FETs) have already been performed in the past. However, the device principle of SGTs is greatly different from SB-FETs even though both devices exploit a Schottky barrier at the source contact.…”

mentioning

confidence: 99%

Single-crystalline ZnO sheet Source-Gated Transistors

Dahiya

Opoku

Sporea

et al. 2016

Sci Rep

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Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDSSAT) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.

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“…In the previous reports on silicidation of NWs through point contact under UHV system, the reaction occurs through a diffusion-controlled reaction due to the limited contact area between Si and metal, resulting in the formation of epitaxial CoSi 2 with atomically sharp edge. 13,27 Since the current core-shell NW system has large contact area between Si NW and Co layer, however, there is little barrier for diffusion. So, the silicidation is thought to be governed by a nucleation-controlled reaction resulting in polycrystalline CoSi 2 formation.…”

Section: Resultsmentioning

confidence: 99%

Silicidation of Co/Si Core Shell Nanowires

Lee

Park

2012

J. Electrochem. Soc.

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The formation of CoSi 2 nanowires (NWs) via the annealing of Si NWs conformally coated with atomic layer deposited (ALD) Co layers was investigated. Co ALD was carried out using Co(iPr-AMD) 2 and NH 3 as a precursor and a reactant, respectively. Rapid thermal annealing (RTA) of Co/Si core-shell NWs produced Co oxide instead of CoSi 2 due to oxygen contamination during annealing. To prevent oxygen contamination, a highly conformal ALD Ru layer was used as a capping layer. X-ray diffraction showed the formation of CoSi 2 when the Co/Si core-shell NWs were annealed at over 800 • C. To investigate the deposition and silicidation process on a nanometer scale, high resolution C s -corrected scanning transmission electron microscopy was utilized with electron energy loss spectroscopy and energy dispersion spectroscopy. In contrast to previous reports on silicidation of NWs, the dominant diffusion species was found to be Si instead of Co based on a nucleation-controlled reaction.Silicides are important materials for contacts in modern Si devices due to their low contact resistance and good compatibility. Silicide is usually formed by metal deposition on a Si layer followed by annealing at the appropriate temperature through a solid-state reaction. 1 Recently, silicide nanowires (NWs) have attracted great attention since they have the high conductivity and compatibility with metal required for contacts in nanowire devices. Silicide NWs are usually synthesized by chemical vapor deposition (CVD). For instance, three kinds of cobalt silicide NWs, Co 2 Si, Co 3 Si, and CoSi, were synthesized by the reaction of CoCl 4 vapor and Si substrate. 2 Also, SiH 4 gas was reacted with Ni thin film to form NiSi NW. 3, 4 Similarly, several silicide NWs have been reported, such as TiSi

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Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Cited by 21 publications

References 16 publications

Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts

Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts

Single-crystalline ZnO sheet Source-Gated Transistors

Silicidation of Co/Si Core Shell Nanowires

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