Single-crystalline ZnO sheet Source-Gated Transistors

Dahiya, Abhishek Singh; Opoku, Charles; Sporea, Radu A.; Sarvankumar, Balasubramaniam; Poulin‐Vittrant, Guylaine; Cayrel, Frédéric; Camara, Nicolas; Alquier, Daniel

doi:10.1038/srep19232

Cited by 37 publications

(29 citation statements)

References 45 publications

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“…The low-temperature and solution-based assembly of FETs, using semiconducting nanostructures, offer practical solutions toward realizing low-cost, flexible self-powered autonomous systems 19 . Meanwhile, employing many different semiconducting nanostructures, including Si nanowire (NW) arrays 20 , ZnO NWs 21 and ZnO nanosheets (NSs) 16 , at near room temperature (RT) device assembly processes, low power consumption SGTs have been demonstrated in the past. Such fabrication process characteristics, coupled with flat output current saturation features of SGTs, are ideal for a range of low power applications, including wearable electronics and self-powered systems.…”

Section: Introductionmentioning

confidence: 99%

Stability evaluation of ZnO nanosheet based source-gated transistors

Dahiya

Sporea

Poulin‐Vittrant

et al. 2019

Sci Rep

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Semiconducting nanostructures are one of the potential candidates to accomplish low-temperature and solution-based device assembly processes for the fabrication of transistors that offer practical solutions toward realizing low-cost flexible electronics. Meanwhile, it has been shown that by introducing a contact barrier, in a specific transistor configuration, stable device operation can be achieved at much reduced power consumption. In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO 2 substrates. We have fabricated two variant of transistors based on nanoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transistors (SGTs). Stability tests are performed on both devices with respect to gate bias stress at three different regimes of transistor operation, namely off-state, on-state and sub-threshold state. While in the off-state, FETs shows comparatively better stability than SGTs devices, in both sub-threshold and on-state regimes of transistors, SGTs clearly exhibits better robustness against bias stress variability. The present investigation experimentally demonstrates the potential advantages of SGTs over FETs as driver transistor for AMOLEDs display circuits which require very high stability in OLED driving current.

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Section: Introductionmentioning

confidence: 99%

Stability evaluation of ZnO nanosheet based source-gated transistors

Dahiya

Sporea

Poulin‐Vittrant

et al. 2019

Sci Rep

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“…ZnO nanostructures are used in catalytic reactions due to their higher catalytic activity and larger surface area [9]. ZnO nanoparticles with microstructures have been broadly used in gas sensors, transparent conductors and transistors, near-UV emission and piezoelectric applications [10][11][12]. ZnO nanoparticles have many applications in transparent electrodes [13], pH sensors [14], biosensors [15], UV photodiodes [16] and acoustic wave devices [17].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of anticorrosive behaviour of ZnO nanotetra-pods on a AZ91-grade Mg alloy

Brindha¹,

Ajith²,

Nandhini³

et al. 2019

Bull Mater Sci

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Highly cross-linked zinc oxide (ZnO) with the nanorod morphology of tetra-pods was successfully prepared using a microwave irradiation (MWI) technique. In comparison with the available conventional techniques, the MWI technique has the advantage of producing different morphological structures with high purity and in a shorter reaction time. These tetra-pods consist of a ZnO core in the zinc blende from which four ZnO arms emerge in the wurtzite structure. In this investigation, the effects of irradiation times and the growth mechanism of ZnO nanotetra-pods were discussed. The structural, morphological and optical properties of ZnO nanorods were investigated by field emission scanning electron microscopy, X-ray diffraction, an ultra violet visible spectrometry and energy-dispersive spectroscopy. The electrochemical corrosion behaviours of an AZ91-grade Mg alloy and a ZnO/PN nanotetra-pod-coated Mg alloy were investigated. The Tafel plot revealed that the corrosion of Mg drastically decreased on coating with a thin layer of ZnO nanotetra-pods and PN (Mg/PN/ZnO) compared to Mg in a KOH electrolyte.

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“…It carries the advantages of both conventional electronics (high performance and functionalities) and printed organic electronics (low-fabrication cost, large area, etc.). Printing of intrinsically flexible high mobility materials such as silicon-based materials (NMs) [ 48 ], NRs [ 46 , 103 ], NWs [ 25 ], MWs [ 100 , 123 ], carbon-based materials (CNTs [ 197 , 198 ], graphene [ 30 , 176 ]), two-dimensional (2D) materials of transition-metal dichalcogenides (TMDCs) [ 199 , 200 ], and metal oxide nanomaterials (such as ZnO) [ 25 , 83 , 110 , 111 , 201 , 202 ] have been attempted. Vertically aligned NWs are usually transferred using CP technique [ 25 ], whereas transfer of laterally aligned structures such as NMs and NRs is generally performed using TP approach [ 46 ].…”

Section: Opportunities and Challengesmentioning

confidence: 99%

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

et al. 2020

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The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

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Single-crystalline ZnO sheet Source-Gated Transistors

Cited by 37 publications

References 45 publications

Stability evaluation of ZnO nanosheet based source-gated transistors

Stability evaluation of ZnO nanosheet based source-gated transistors

Evaluation of anticorrosive behaviour of ZnO nanotetra-pods on a AZ91-grade Mg alloy

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

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