NiO as an Inorganic Hole-Transporting Layer in Quantum-Dot Light-Emitting Devices

Caruge, Jean-Michel; Halpert, Jonathan E.; Bulović, Vladimir; Bawendi, Moungi G.

doi:10.1021/nl0623208

Cited by 245 publications

(195 citation statements)

References 31 publications

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“…Over the last few years, a variety of solution-based synthesis methods have become available for producing high quality nanocrystals (NCs), either as self-standing colloidal nanoparticles [1][2][3] or as highly controlled crystalline nanophases in suitable host matrices [4][5][6][7] , thus combining the superior resistance of inorganic emitters over organic dyes to degradation with the advantages of inexpensive and large-scale fabrication processes, such as spin coating, contact and ink jet printing and layer-by-layer deposition [8][9][10][11] . Several examples of light-emitting diodes (LEDs) based on nanostructured (NS) materials have been reported by different groups [11][12][13][14] , and have shown a remarkable tunability across the visible spectrum 8,[15][16][17][18] . The extension of the emission into the ultraviolet (UV) region is problematic and increasing efforts are being devoted to this task because of the technological relevance of UV-emitting solution processable nanomaterials 13,[17][18][19][20] .…”

mentioning

confidence: 99%

Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

et al. 2012

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The development of integrated photonics and lab-on-a-chip platforms for environmental and biomedical diagnostics demands ultraviolet electroluminescent materials with high mechanical, chemical and environmental stability and almost complete compatibility with existing silicon technology. Here we report the realization of fully inorganic ultraviolet lightemitting diodes emitting at 390 nm with a maximum external quantum efficiency of ~0.3%, based on sno 2 nanoparticles embedded in sio 2 thin films obtained from a solution-processed method. The fabrication involves a single deposition step onto a silicon wafer followed by a thermal treatment in a controlled atmosphere. The fully inorganic architecture ensures superior mechanical robustness and optimal chemical stability in organic solvents and aqueous solutions. The versatility of the fabrication process broadens the possibility of optimizing this strategy and extending it to other nanostructured systems for designed applications, such as active components of wearable health monitors or biomedical devices.

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confidence: 99%

Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

et al. 2012

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“…QDLEDs will be a good choice for the future of LEDs due to their colour stability, easily tunable colour and long lifetime. In recent years, due to all the advantages of the QDLEDs mentioned above, many research groups have worked on QDLEDs [72][73][74][75], and the efficiency of this type of light emitting diodes has improved in subsequent researches [76][77][78][79][80].…”

Section: A Brief Review Of Quantum Dot-based Light Emitting Diodes (Qmentioning

confidence: 99%

Quantum Dot-Based Light Emitting Diodes (QDLEDs): New Progress

Heydari¹,

Ghorashi²,

Han³

et al. 2017

Quantum-Dot Based Light-Emitting Diodes

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In recent years, the display industry has progressed rapidly. One of the most important developments is the ability to build flexible, transparent and very thin displays by organic light emitting diode (OLED). Researchers working on this field try to improve this area more and more. It is shown that quantum dot (QD) can be helpful in this approach. In this chapter, writers try to consider all the studies performed in recent years about quantum dot-based light emitting diodes (QDLEDs) and conclude how this nanoparticle can improve performance of QDLEDs. In fact, the existence of quantum dots in QDLEDs can cause an excellent improvement in their efficiency and lifetime resulted from using improved active layer by colloidal nanocrystals. Finally, the recent progresses on the quantum dot-based light emitting diodes are reviewed in this chapter, and an important outlook into challenges ahead is prepared.

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“…휘발성 용매에 분산된 콜로이드 공정으로 제조된 양자 점 발광소자(quantum dot light emitting devices, QD-LED)는 대면적 제작이 용이하여 면광원으로 사용이 가 능한 소자이다. [1][2][3][4][5][6] 전도성 고분자 전하수송 층을 사용하여 최고의 발광 효 율을 나타내는 QD-OLED(quantum dot-organic light emitting devices)의 양자 효율을 높이기위해 평탄한 양자점 배열에 관한 연구가 활발히 이뤄지고 있다. …”

Section: 서 론unclassified

Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices

Yoon¹,

Jeon²,

Lee³

2013

Korean. J. Mater. Res.

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Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnO x with a resistivity of 10 Ω·cm, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

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NiO as an Inorganic Hole-Transporting Layer in Quantum-Dot Light-Emitting Devices

Cited by 245 publications

References 31 publications

Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

Quantum Dot-Based Light Emitting Diodes (QDLEDs): New Progress

Effect of Microstructure of Quantum Dot Layer on Electroluminescent Properties of Quantum Dot Light Emitting Devices

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