NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

Suzuki, Atsushi; Choe, Songbeak; Yamada, Y.; Otsuka, Nobuyuki; Ueda, Daisuke

doi:10.7567/jjap.55.121001

Cited by 20 publications

(7 citation statements)

References 24 publications

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“…Figure shows a schematic illustration of a picosecond laser PLD growth system used in this study, where germanium (Ge) mixed with Ga was used as target materials. The Ge dopant for n‐GaN shows higher solubility than silicon . The picosecond laser pulses are transmitted through the viewport of the PLD vacuum chamber followed by irradiation of the Ga–Ge target at a pulse repetition frequency over 100 kHz.…”

Section: Experimental Pld With An Optical Blanking Systemmentioning

confidence: 99%

“…Although it is known that regrowth technology is effective to reduce contact resistance, there are a couple of problems to grow heavily doped GaN films by metal organic chemical vapor deposition (MOCVD). One is the limitation in a doping concentration range below 1 × 10 20 cm −3 . The other is an undesirable faceting effect in the recess region at the GaN surface .…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology

Ueda

2019

Physica Status Solidi (a)

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The optical blanking operation of pulsed laser deposition (PLD) using a picosecond laser enables the dramatic reduction of sheet resistance with excellent uniformity for the regrowth of heavily Ge-doped GaN films. Attained carrier density exceeds over 3.5 Â 10 20 cm À3 , which is good enough to achieve nonalloy ohmic contact. The obtained contact resistance is 0.05 Ω mm regardless of the overlaying metal. Blanking duty ratio for the pulse-mode operation can be simply controlled by rotating the half-wave plate outside the vacuum chamber. By introducing the blanking mode, the complete elimination of the Ga droplet is achieved even at a growth temperature of 500 C, showing a decrease in sheet resistance. It is confirmed that the ohmic characteristics remain unchanged on annealing treatment up to 300 C. The proposed growth technique using laser blanking is free from mechanical shutter; therefore, the technique has superior repeatability in GaN epitaxy. It is believed the present optical blanking operation is a useful technique for the industrialization of practical GaN devices.

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Section: Experimental Pld With An Optical Blanking Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology

Ueda

2019

Physica Status Solidi (a)

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“…have been used to fabricate E-mode AlGaN/GaN HEMT due to their high hole concentration and compatibility to wet etch process. Nevertheless, the V th of HEMT with p-NiO and p-Cu 2 O gate cap was generally around zero volt [14][15][16][17][18]. As we know, the principle of p-GaN cap to achieve E-mode operation lies in that, at zero bias voltage, the bottom of conduction band (E c ) can be raised above the Fermi level (E f ) of GaN to exhaust the twodimensional electron gas (2DEG) under the gate.…”

Section: Introductionmentioning

confidence: 99%

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

et al. 2021

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p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT); however, the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance. Thus, the more cost-effective cap layer has attracted wide attention in GaN-based HEMT. In this paper, p-type tin monoxide (p-SnO) was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment. Simulation results show that by simply adjusting the thickness (50 to 200 nm) or the doping concentration (3 × 10 17 to 3 × 10 18 cm −3 ) of p-SnO, the threshold voltage (V th ) of HEMT can be continuously adjusted in the range from zero to 10 V. Simultaneously, the device demonstrated a drain current density above 120 mA mm −1 , a gate breakdown voltage (V BG ) of 7.5 V and a device breakdown voltage (V B ) of 2470 V. What is more, the etching-free AlGaN/ GaN HEMT with sputtered p-SnO gate cap were fabricated, and achieved a positive V th of 1 V, V BG of 4.2 V and V B of 420 V, which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT. This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.

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“…In order to simplify the circuit and improve the safety, we need some methods to realize the normally off (enhancement-mode) GaN HEMT in practical applications [ 8 ]. At present, the main methods for realizing the normally off GaN HEMT include recessed gate [ 9 , 10 , 11 ], p-GaN cap layer [ 12 , 13 , 14 ], fluorine-plasma ion implantation [ 15 , 16 ], InGaN cap layer [ 17 , 18 ], and so on [ 19 , 20 , 21 ]. Among these methods, the most commonly used method is the p-GaN cap layer structure because of its high reliability [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Niu

Wang

et al. 2021

Micromachines

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The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 Ω·mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.

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NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

Cited by 20 publications

References 24 publications

The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology

The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

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