NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

Lim, Poon Nian; Zhi, Dong; Zhou, Qian; Yeo, Yee-Chia

doi:10.1063/1.4772710

Cited by 4 publications

(1 citation statement)

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“…For instance, novel ultralow resistivity (i.e., ρ 10 μ cm) TM-based silicides are intended to be used as interconnects or gate electrodes for the next generation CMOS technology [7][8][9][10][11]. Compared to noble metals this material class provides appropriate Schottky barrier heights, thermal stability, and high robustness against electromigration processes [12].…”

Section: Introductionmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

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Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi 2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

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Section: Introductionmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

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Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

et al. 2017

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Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs Author links open overlay panelKeng-HuiShen a Szu-HungChen b Wei-TingLiu a Bao-HsienWu a Lih-JuannChen a Show more https://doi.org/10.1016/j.matdes.2016.11.084 Get rights and content Highlights • The insertion of Ti layer effectively suppresses Yb out-diffusion and prevents the Yb from oxidation during silicidation. • Yb atoms are confined by the inserted Ti layer and react with both Ni and Si to form Yb-Ni silicide. • The confinement leads the SBH of the system to a 0.02 and 0.025 eV lowering at 500 and 600 °C, respectively. • The RE metal confinement structure provides a CMOS compatible approach for further SBH engineering and technology nodes. Abstract A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surface accumulation of Yb generally encountered in the RE metal incorporated Ni silicide system. The confinement structure is realized by inserting a Ti diffusion barrier layer between Yb and Ni layers. Yb atoms can be constrained in a specified reaction region during silicidation as evidenced by Auger electron spectroscopy and cross-section transmission electron microscopy analysis. The RE metal confinement structure provides a complementary metal-oxide-semiconductor compatible approach for further Schottky barrierheight engineering and is a promising method for future technology nodes. Graphical abstract 1. Download high-res image (272KB) 2. Download full-size image 

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Microstructure and corrosion resistance of ERNiCrMo-13 and NiCrBSi coatings in simulated coal-fired boiler conditions: The effect of fly-ash composition

Wang

2020

Surface and Coatings Technology

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NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

Abstract: Articles you may be interested inNano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Cited by 4 publications

References 44 publications

Atomic size effects studied by transport in single silicide nanowires

Atomic size effects studied by transport in single silicide nanowires

Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

Microstructure and corrosion resistance of ERNiCrMo-13 and NiCrBSi coatings in simulated coal-fired boiler conditions: The effect of fly-ash composition

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