Nitridation of Si(100) surface with NH3

Ishidzuka, S.; Igari, Y.; Takaoka, Tsuyoshi; Kusunoki, Isao

doi:10.1016/s0169-4332(98)00034-8

Cited by 25 publications

(20 citation statements)

References 16 publications

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“…The other three peaks (A, B and C) centered around 101.4 eV, 102.7 eV and 103.6 eV are attributed to Si 3 N 4 , SiN x O y and SiO 2 respectively. The binding energy of the peaks assigned to Si 3 N 4 , SiN x O y and SiO 2 matches quite well with the studies reported earlier [16][17][18][19][20]. The presence of both SiN x O y and SiO 2 peaks in Si 2p spectra clearly shows the incorporation of oxygen in all samples.…”

Section: Resultssupporting

confidence: 89%

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Sahu¹,

Srivastava²,

Agnihotri³

et al. 2005

Journal of Non-Crystalline Solids

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Section: Resultssupporting

confidence: 89%

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Sahu¹,

Srivastava²,

Agnihotri³

et al. 2005

Journal of Non-Crystalline Solids

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“…48 Following that suggestion, a recent computational study has been successful in explaining the segregation of N atoms from the bulk to the surface at high temperatures using a model where the hydrogen atoms have been removed from the surface. 51 These computational investigations are particularly important for the process of formation of silicon nitride films, which may involve temperatures as high as 1000 K, 53 where no H is remaining on the surface. However, if these predictions are applied to the thermal decomposition of a surface saturated with ammonia at lower temperatures, they would suggest that desorption processes have to take place in order to start the decomposition of ͑Si͒NH 2 and the migration of N atoms.…”

Section: Introductionmentioning

confidence: 99%

Cooperative nitrogen insertion processes: Thermal transformation ofNH3on a Si(100) surface

Rodríguez‐Reyes

Teplyakov

2007

Phys. Rev. B

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The thermal behavior of an ammonia-covered Si͑100͒ surface is investigated by infrared spectroscopy and density functional methods. Upon adsorption at room temperature, ͑Si͒NH 2 and Si-H species are formed on the surface. Comparison of the vibrational studies with density functional calculations suggests that the ͑Si͒NH 2 structures are preferentially located on the same side along the silicon dimer row on a ͑2 ϫ 1͒ reconstructed Si͑100͒ surface, although a mixture of different long-range configurations is likely formed. Decomposition of these ͑Si͒NH 2 species is observed to start at temperatures as low as 500 K. Theoretical predictions of the vibrational modes indicate that at this point, the spectrum is composed of a combination of ͑Si͒ 2 NH and ͑Si͒ 3 N vibrational signatures, which result from insertion of N into Si-Si bonds. Our computational study of the formation of ͑Si͒ 2 NH structures indicates that subsurface insertion is more feasible if the strain imposed during the insertion in a Si dimer is attenuated by a ͑Si͒ 2 NH structure already inserted in the neighboring dimer along the same silicon dimer row. This cooperative reaction lowers the energetic requirements for subsurface insertion, providing a theoretical explanation for the mechanism of thermal decomposition of NH 3 on Si͑100͒ and for other systems where subsurface migration is observed experimentally.

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“…The peak at 288.6 eV can be attributed to carbon-carbon or carbon-oxygen bonds. Although the O1s peak at 532.2 eV is very strong, it is not due to SiN x O y or SiO 2 , because in that case the Si2p signal should consist of two peaks centered at 103.5 and 105.6 eV, which is not the case here [39,40]. Binding energies of 1135.11 and 1164.26 eV typical for Eu 3 + 3d 5/2 and binding energies of 1124.6 and 1153.75 eV typical for Eu 2 + 3d 5/2 as reported by Vercaemst et al [41] were completely consistent with the peaks observed in Fig.…”

Section: Eu 3 + -Eu 2 + Conversionsmentioning

confidence: 71%

Preparation, characterization and luminescence properties of porous Si3N4 ceramics with Eu2O3 as sintering additive

Yang

Delsing

et al. 2010

Journal of Luminescence

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Nitridation of Si(100) surface with NH3

Cited by 25 publications

References 16 publications

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

Cooperative nitrogen insertion processes: Thermal transformation ofNH3on a Si(100) surface

Preparation, characterization and luminescence properties of porous Si3N4 ceramics with Eu2O3 as sintering additive

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